IPC302N15N3X7SA1

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Part Status:	Active

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The IPC302N15N3X7SA1 is a silicon N-channel MOSFET with enhanced avalanche performance. This device offers some of the best combination of gate charge and low gate-to-drain capacitance for an easy drive, high performance power MOSFET.This product category is transistors and field-effect transistors (FETs/MOSFETs). Specifically, this is a single MOSFET. This type of transistor utilizes an insulated gate to control the flow of current in an electronic circuit. FETs and MOSFETs can be used to amplify signals or switch rapidly between on and off states.IPC302N15N3X7SA1 has high-side, synchronous, N-channel enhancement-mode MOSFETs in TSOP-6 packages. These MOSFETs were designed with the highest quality materials and processes to deliver superior reliability and performance. It features low gate charge and low drivestrength to allow for minimal power loss and fast switching times.The IPC302N15N3X7SA1 is typically used as power switches in AC to DC converters, automotive and consumer electronics, LED lighting, mobile phone, industrial and telecommunication applications. The device provides an avalanche guaranteed performance and an ultra low Rds(on) in a compact package with low on-resistance, which allows for high-efficiency application designs. It also offers an industry leading ESD protection.These devices are ESD-protected up to the maximum level of 1.5KV. They have low impedance source/drain structures that significantly reduce the on-state resistance (RDS(on)) and enable high-effective switching performance throughout the operating temperature range. They also have an extreme low input capacitance (Ciss) and fast switching times.The IPC302N15N3X7SA1 has an optimal figure of merit, which enables greater power switching efficiency, less EMI (electromagnetic interference) noise, and improved transient response. The MOSFET also provides superior electrical breakdown performance, greatly reducing current losses through the FET and its body-diode. It also has a intrinsically low leakage level, which minimizes the effect of thermal runaway in high power applications.In conclusion, the IPC302N15N3X7SA1 is a high-performance MOSFET optimized for a wide range of AC/DC conversion and switching applications. Its key features include an advanced avalanche performance, low gate charge, low gate-to-drain capacitance and extremely low on-state resistance for fast switching operation. This device offers improved EMI performance and power efficiency and provides an industry leading ESD protection to maximize reliability.

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