IPD60R460CEATMA1 Discrete Semiconductor Products

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Integrated Power Devices, or IPDs, are semiconductor devices that combine different power semiconductor technologies into a single package. This makes them ideal for high-performance, high-reliability applications. The IPD60R460CEATMA1 is a IPD that integrates a Schottky diode and N-channel enhancement mode MOSFET in a surface-mount housing.

The IPD60R460CEATMA1 is optimized for use in power management applications and can help reduce board space. It is suitable for use in applications such as high-frequency switching and power factor correction. It is also well-suited for general purpose MOSFET switching, particularly in low-side applications.

The IPD60R60CEATMA1 combines the diode and MOSFET in a single, low-profile package. The Schottky diode and MOSFET are connected in parallel, allowing them to share the same lead frame and package. This helps reduce switching times and improves efficiency compared to separate components. This also helps to reduce board space, which is particularly important in applications where space is limited. The device also has a low on-resistance of only 0.1Ω.

The IPD60R460CEATMA1 is optimized for interfacing with, and driving, various components such as motors, LEDs, and display drivers. It is also widely used in battery-operated applications. Its low loss semiconductor technologies such as Schottky diode and MOSFET, coupled with its efficient power management, make it a great choice for these types of applications.

The IPD60R460CEATMA1 operates by having the Schottky diode connected in parallel with the MOSFET. This connection allows for fast switching times and improved efficiency. When power is applied to the gate terminal, the MOSFET will turn on and become conductive. This causes the Schottky diode to become reverse biased, which prevents current from flowing from the gate to the source. This helps to reduce switching losses and increases efficiency.

When the gate voltage is reversed, the MOSFET turns off and the Schottky diode becomes forward biased. This allows current to flow from the gate to the source, which helps to reduce the possibility of arcing and static electricity. The MOSFET and Schottky diode combination ensures a fast device turn-off time, which helps reduce noise and EMI generated during switching.

The IPD60R460CEATMA1 is suitable for use in a wide variety of power management applications. It is a high-performance, high-reliability device that is well-suited for use in battery-operated and high-frequency switching applications. Its low loss semiconductor technologies, combined with its small package size make it a great choice for power management applications where space is limited.

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