IPD90N06S407ATMA2

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IPD90N06S407ATMA2 is a power MOSFET from International Rectifier, part of the HiPerFET family. A MOSFET is a metal oxide semiconductor field-effect transistor. This surface-mounted MOSFET is used to control high-voltage, high-speed switching of low-current digital logic. Boasting a 0.32 mm on-state resistance and lower gate charge, IPD90N06S407ATMA2 offers higher power or improved performance in the same size.

This device, a N-channel FET, has an drain-to-source breakdown voltage of 90 V, an 300 mΩ RDS(on). Additionally, it has an average gate charge of 11.9 nC, a maximum drain-source on-state resistance RDS(on) of 0.32 Ohms and a low input capacitance of 225 pF. It also has a total gate charge of 15 nC and a total gate-drain charge of 32 nC with a maximum drain current of 20 A.

IPD90N06S407ATMA2 can be widely applied in a variety of industries. For example, it is commonly used in motor control, low voltage power management, uninterruptible power supplies, server and telecom power and 80 Plus / Energy Star power supplies. It is also widely used in harsh environments and high reliability applications, such as medical, industrial and consumer electronics, LED lighting and military applications.

MOSFETs found their foothold in the world of digital switching because of their low input capacitance, low gate charge, and their linear resistance between drain and source. IPD90N06S407ATMA2 works on the principle of thermal-induced hot electron injection, which helps it to maintain higher efficiency, low power loss and faster switching, even under harsh operating conditions. This helps reduce the system\'s overall size and power consumption.

IPD90N06S407ATMA2 provides fast switching speed with low gate drive requirement and an adaptation of process technology that integrates smart power management functions. Its high performance allows it to be applied in high density and portable equipment, such as tablets and mobile phones. The device features fast switching with low power loss and is designed to meet the most demanding requirements of such advanced products.

The IPD90N06S407ATMA2 power MOSFET is a powerful tool for achieving high electrical current, fast switching speed and low power losses. Due to its advanced features and its large transistors, it can be applied in a wide range of applications and under very harsh conditions. Moreover, its excellent thermal characteristics, low power losses, low gate charge and low capacitance helps to reduce the size and power consumption of the device, making it a very desirable solution in today\'s digital market.

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