IPD90P03P404ATMA1 Allicdata Electronics
Allicdata Part #:

IPD90P03P404ATMA1TR-ND

Manufacturer Part#:

IPD90P03P404ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 90A TO252-3
More Detail: P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-...
DataSheet: IPD90P03P404ATMA1 datasheetIPD90P03P404ATMA1 Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 253µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 137W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPD90P03P404ATMA1 Application Field and Working Principle

The IPD90P03P404ATMA1 is a power MOSFET manufactured by Infineon. It is a N-channel MOSFET with a drain-source voltage of 40 volts and a drain current of 18 amperes. This MOSFET has excellent avalanche ruggedness, a high peak current rating, and a low on-state resistance. It is suitable for applications such as automotive lighting and high-power power supplies.

MOSFETs are semiconductor devices that are used to regulate or amplify the flow of electrical power. Each MOSFET is made of a thin layer of material called an oxide layer between two metal electrodes, the source and the drain, which act as the gate terminal and the drain terminal, respectively. This oxide layer allows the MOSFET to modulate the current flow from the source to the drain by adjusting the voltage applied to the gate.

The IPD90P03P404ATMA1 is a power MOSFET, as opposed to a logic-level MOSFET. Logic-level MOSFETs are designed to be used in low-power and digital circuitry applications, whereas power MOSFETs are designed for high-current, high-voltage applications. The IPD90P03P404ATMA1 is designed to handle up to 18 amperes of continuous drain current, with a peak current rating of up to 50 amperes. It is designed to handle up to 40 volts between the source and drain, and has an on-state resistance (RDS(ON)) of 0.063 ohm.

The IPD90P03P404ATMA1 MOSFET also has excellent avalanche ruggedness, which means that it can survive high-voltage surges without suffering permanent damage. This makes it a great option for automotive applications. Furthermore, the IPD90P03P404ATMA1 MOSFET has a low on-state resistance, which allows a higher current to flow through the device at a lower voltage. This feature also reduces power loss and increases efficiency.

The IPD90P03P404ATMA1 MOSFET is an ideal choice for automotive lighting and high-power power supplies. Its high current and voltage ratings make it capable of handling the high current and voltages typically experienced in such applications. Its low on-state resistance and high avalanche ruggedness make it a reliable component in the event of surges or over-voltage conditions. Finally, its peak current rating allows it to handle high inrush current. As such, the IPD90P03P404ATMA1 MOSFET is an ideal choice for automotive lighting and high-power power supplies.

The specific data is subject to PDF, and the above content is for reference

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