Allicdata Part #: | IPG16N10S461AATMA1-ND |
Manufacturer Part#: |
IPG16N10S461AATMA1 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 8TDSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 16A 29W Surfa... |
DataSheet: | IPG16N10S461AATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.26942 |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 16A |
Rds On (Max) @ Id, Vgs: | 61 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 9µA |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
Power - Max: | 29W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PG-TDSON-8-10 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IPG16N10S461AATMA1 is a power switch designed for pulse width modulation (PWM) applications. It is an integrated power device that is highly efficient and provides a safe and reliable solution for controlling a wide range of electrical loads. It features very low on resistance and is well-suited for industrial applications. In addition, it is resistant to overvoltage and undershoot, making it suitable for a range of voltage demanding applications in medical, automotive, and other high-end markets.
The IPG16N10S461AATMA1 is an array of 4 N-channel MOSFETs. Each MOSFET is independent and can be used for both driving and synchronizing signals. In addition, each MOSFET is protected from overvoltage and undershoot through the integrated protection circuitry. Due to its low on resistance, the device is capable of delivering up to 10 A of continuous current each.
The IPG16N10S461AATMA1 is designed for use in high power applications such as motor drives, robotics, solenoid and valve control. It is also ideal for use in PWM power applications, providing higher efficiency and reliability than other solutions. It is reliable in applications where high switching speed is required, such as LED lighting and DC motors. Due to its relatively low power dissipation capabilities, it can also be used in applications where space is limited.
The working principle behind the IPG16N10S461AATMA1 is based on a standard N-channel MOSFET design. When a voltage is applied to the gate of the MOSFET, it creates an electrostatic field across the channel. This field forces electrons across the channel, allowing current to flow through the device. The unique design of the channel ensures that the channel can switch very quickly, making it suitable for high speed applications.
The IPG16N10S461AATMA1 provides an efficient and reliable solution for powering many devices. The array of four MOSFETs allows for greater flexibility in applications, and with its low on resistance, it provides an efficient and safe solution for powering devices that require a high level of current and voltage. In addition, it is protected from overvoltage and undershoot, providing a reliable and safe solution for a variety of environments.
The specific data is subject to PDF, and the above content is for reference
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