| Allicdata Part #: | IPI076N15N5AKSA1-ND |
| Manufacturer Part#: |
IPI076N15N5AKSA1 |
| Price: | $ 3.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MV POWER MOS |
| More Detail: | |
| DataSheet: | IPI076N15N5AKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 3.25080 |
| 10 +: | $ 2.90430 |
| 100 +: | $ 2.38140 |
| 500 +: | $ 1.92837 |
| 1000 +: | $ 1.62632 |
| Series: | * |
| Part Status: | Active |
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IPI076N15N5AKSA1 Application Field and Working Principle
The IPI076N15N5AKSA1, also known as a Field-Effect Transistor (FET), is an element commonly used in today’s electronic circuit designs. FETs, a form of transistor, are semiconductor devices that can control the flow of current through a circuit, similar to the way a valve controls the flow of liquid. The IPI076N15N5AKSA1 is a single-channel, high voltage device that is an ideal choice for many modern circuits.
Features and Benefits
The IPI076N15N5AKSA1 has a maximum drain-source voltage of +150V and a stable, controlled on-resistance of 24 m Ω, allowing for efficient operation and increased current with minimal heat. Maximum drain current is rated at 3.2A, with maximum power dissipation at 25 watts. This device also has an excellent gate-source voltage range, with a defined low threshold voltage and very low gate leakage current.
The IPI076N15N5AKSA1 is also designed with features to ensure reliability and extended life. Its Avalanche rectangular I-V curve ensures the risk of misinterpretation of data is minimized. This device is also designed to handle high temperatures, with peak-to-peak on-resistance variation of 0.08%/K and a maximum junction temperature of 150℃.
Applications
Due to its exceptional characteristics, such as high withstand voltage, low on-resistance, and ultra-low gate leakage current, the IPI076N15N5AKSA1 has found significant success in many applications ranging from automotive to industrial and communication. Automotive related systems can benefit from this device’s wide withstand voltage, low on-resistance, and high drain current, making it ideal for automobiles, DC/DC converters, secondary injection and protection.
Industry-related designs for UPS, welding machines and appliance motors can find great benefit by using the IPI07665N5AKSA1 due to its low on-resistance, Avalanche data and excellent gate-source voltage range. This device is also ideal for communication systems such as PON, TFT-LCD, DSLAM and ADSL, as it provides high withstand voltage, low on-resistance, and low gate leakage current.
Working Principle
At the heart of the IPI076N15N5AKSA1 lies the field-effect transistor, which acts as a switch. There are three terminals on a FET – the gate, the source, and the drain. The circuit designer merely has to apply a small voltage to the gate (typically in the range of a few volts) to control the current flow through the device. The device will be in an open state if the gate voltage is zero and the device will conduct current if the gate voltage is higher than zero.
The FET’s operation is based on an electric field produced from the gate terminal, which controls the current flow between the drain and the source. The current flows from the drain to the source, with the flow directly proportional to the applied gate voltage. The current flow also depends on the physical properties of the channel, such as length and width. The device also has a low input impedance, which mean the gate terminal can be driven directly with a microcontroller.
Conclusion
The IPI076N15N5AKSA1 is a highly advanced high-voltage Field-Effect Transistor designed to provide a low on-resistance, avalanche data, and excellent gate-source voltage range. Suitable for a variety of industries, from automotive to communication, it offers excellent electrical characteristics and long-term reliability. The device’s operation lies in its ability to control the current flow using only a small input voltage applied to its gate terminal, creating an electric field that reduces the resistance between the drain and source pins.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IPI030N10N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
| IPI09N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A I2PAK... |
| IPI037N08N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 100A TO26... |
| IPI032N06N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
| IPI076N15N5AKSA1 | Infineon Tec... | 3.58 $ | 1000 | MV POWER MOS |
| IPI024N06N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
| IPI075N15N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 150V 100A TO2... |
| IPI076N12N3GAKSA1 | Infineon Tec... | 1.35 $ | 1000 | MOSFET N-CH 120V 100A TO2... |
| IPI045N10N3GXK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
| IPI04CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
| IPI045N10N3GXKSA1 | Infineon Tec... | 2.58 $ | 213 | MOSFET N-CH 100V 100A TO2... |
| IPI03N03LA | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 80A I2PAK... |
| IPI072N10N3GXK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 80A TO26... |
| IPI040N06N3GXKSA1 | Infineon Tec... | 1.27 $ | 1000 | MOSFET N-CH 60V 90AN-Chan... |
| IPI028N08N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 100A TO26... |
| IPI040N06N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 90A TO262... |
| IPI052NE7N3 G | Infineon Tec... | -- | 1000 | MOSFET N-CH 75V 80A TO262... |
| IPI037N08N3GXKSA1 | Infineon Tec... | 1.57 $ | 1000 | MOSFET N-CH 80V 100AN-Cha... |
| IPI020N06NAKSA1 | Infineon Tec... | 2.1 $ | 1000 | MOSFET N-CH 60V 29A TO262... |
| IPI070N08N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 80A TO262... |
| IPI08CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 95A TO26... |
| IPI072N10N3GXKSA1 | Infineon Tec... | 1.15 $ | 1000 | MOSFET N-CH 100V 80A TO26... |
| IPI04N03LA | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 80A TO-26... |
| IPI06N03LA | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A I2PAK... |
| IPI029N06NAKSA1 | Infineon Tec... | 1.53 $ | 457 | MOSFET N-CH 60V 24A TO262... |
| IPI05N03LA | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 80A I2PAK... |
| IPI041N12N3GAKSA1 | Infineon Tec... | 2.51 $ | 1000 | MOSFET N-CH 120V 120A TO2... |
| IPI023NE7N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 120A TO26... |
| IPI057N08N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 80A TO262... |
| IPI084N06L3GXKSA1 | Infineon Tec... | 0.69 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
| IPI024N06N3GXKSA1 | Infineon Tec... | 2.38 $ | 3775 | MOSFET N-CH 60V 120AN-Cha... |
| IPI037N06L3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 90A TO262... |
| IPI032N06N3GAKSA1 | Infineon Tec... | 2.22 $ | 400 | MOSFET N-CH 60V 120AN-Cha... |
| IPI086N10N3GXKSA1 | Infineon Tec... | 1.23 $ | 405 | MOSFET N-CH 100V 80A TO26... |
| IPI070N06N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO220... |
| IPI05CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
| IPI051N15N5AKSA1 | Infineon Tec... | 3.16 $ | 1000 | MV POWER MOS |
| IPI08CNE8N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 85V 95A TO262... |
| IPI034NE7N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 100A TO26... |
| IPI075N15N3GXKSA1 | Infineon Tec... | 4.59 $ | 168 | MOSFET N-CH 150V 100A TO2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
IPI076N15N5AKSA1 Datasheet/PDF