IPI076N15N5AKSA1 Allicdata Electronics
Allicdata Part #:

IPI076N15N5AKSA1-ND

Manufacturer Part#:

IPI076N15N5AKSA1

Price: $ 3.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MV POWER MOS
More Detail:
DataSheet: IPI076N15N5AKSA1 datasheetIPI076N15N5AKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 3.25080
10 +: $ 2.90430
100 +: $ 2.38140
500 +: $ 1.92837
1000 +: $ 1.62632
Stock 1000Can Ship Immediately
$ 3.58
Specifications
Series: *
Part Status: Active
Description

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IPI076N15N5AKSA1 Application Field and Working Principle

The IPI076N15N5AKSA1, also known as a Field-Effect Transistor (FET), is an element commonly used in today’s electronic circuit designs. FETs, a form of transistor, are semiconductor devices that can control the flow of current through a circuit, similar to the way a valve controls the flow of liquid. The IPI076N15N5AKSA1 is a single-channel, high voltage device that is an ideal choice for many modern circuits.

Features and Benefits

The IPI076N15N5AKSA1 has a maximum drain-source voltage of +150V and a stable, controlled on-resistance of 24 m Ω, allowing for efficient operation and increased current with minimal heat. Maximum drain current is rated at 3.2A, with maximum power dissipation at 25 watts. This device also has an excellent gate-source voltage range, with a defined low threshold voltage and very low gate leakage current.

The IPI076N15N5AKSA1 is also designed with features to ensure reliability and extended life. Its Avalanche rectangular I-V curve ensures the risk of misinterpretation of data is minimized. This device is also designed to handle high temperatures, with peak-to-peak on-resistance variation of 0.08%/K and a maximum junction temperature of 150℃.

Applications

Due to its exceptional characteristics, such as high withstand voltage, low on-resistance, and ultra-low gate leakage current, the IPI076N15N5AKSA1 has found significant success in many applications ranging from automotive to industrial and communication. Automotive related systems can benefit from this device’s wide withstand voltage, low on-resistance, and high drain current, making it ideal for automobiles, DC/DC converters, secondary injection and protection.

Industry-related designs for UPS, welding machines and appliance motors can find great benefit by using the IPI07665N5AKSA1 due to its low on-resistance, Avalanche data and excellent gate-source voltage range. This device is also ideal for communication systems such as PON, TFT-LCD, DSLAM and ADSL, as it provides high withstand voltage, low on-resistance, and low gate leakage current.

Working Principle

At the heart of the IPI076N15N5AKSA1 lies the field-effect transistor, which acts as a switch. There are three terminals on a FET – the gate, the source, and the drain. The circuit designer merely has to apply a small voltage to the gate (typically in the range of a few volts) to control the current flow through the device. The device will be in an open state if the gate voltage is zero and the device will conduct current if the gate voltage is higher than zero.

The FET’s operation is based on an electric field produced from the gate terminal, which controls the current flow between the drain and the source. The current flows from the drain to the source, with the flow directly proportional to the applied gate voltage. The current flow also depends on the physical properties of the channel, such as length and width. The device also has a low input impedance, which mean the gate terminal can be driven directly with a microcontroller.

Conclusion

The IPI076N15N5AKSA1 is a highly advanced high-voltage Field-Effect Transistor designed to provide a low on-resistance, avalanche data, and excellent gate-source voltage range. Suitable for a variety of industries, from automotive to communication, it offers excellent electrical characteristics and long-term reliability. The device’s operation lies in its ability to control the current flow using only a small input voltage applied to its gate terminal, creating an electric field that reduces the resistance between the drain and source pins.

The specific data is subject to PDF, and the above content is for reference

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