| Allicdata Part #: | IPP100N06S2L05AKSA1-ND |
| Manufacturer Part#: |
IPP100N06S2L05AKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 100A TO220-3 |
| More Detail: | N-Channel 55V 100A (Tc) 300W (Tc) Through Hole PG-... |
| DataSheet: | IPP100N06S2L05AKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO220-3-1 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5660pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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The IPP100N06S2L05AKSA1 is a discrete MOSFET belonging to a family of devices with a voltage range of 40V, a continuous drain current ID of 100A and a drain source voltage VDS of 45V. MOSFETs, short for metal oxide semiconductor field-effect transistors, are widely used as efficient power switches in a variety of electronic applications. The IPP100N06S2L05AKSA1 is an ideal choice for electrical engineers needing to switch high power loads in the range of 40-45V, making the device a possible fit for a variety of projects that demand a greater level of power switching.
Application Field
The IPP100N06S2L05AKSA1 is used in applications such as UPS systems, industrial motor drives, DC-DC converters, automotive ignition systems, and power electronics. The package type of this MOSFET is a TO-220, which is a commonly used metal package type for a wide variety of electronics parts. The device is suitable for applications where heat dissipation may be an issue because of its metal casing and excellent thermal characteristics.
Working Principle
The IPP100N06S2L05AKSA1 is a N-Channel enhancement mode MOSFET, which means it can be turned on or off by an electrical signal. It functions by controlling the amount of current flowing through a circuit. Generally, without a signal applied, the MOSFET is ‘off’, meaning the circuit is open and the current doesn\'t flow. When a signal is applied, the MOSFET is ‘on’ and the current will flow. The gate of the MOSFET is insulated from the rest of the device, so the current needs to be externally applied to turn it ‘on’ or ‘off’. The gate voltage VC is the only control parameter required to control the ID current flowing through the MOSFET. Being an N-Channel device, this will have a voltage threshold that must be exceeded before the device can be turned on.
The device offers high performance, including a fast switching frequency, ultra-low RDS(on) resistance and excellent thermal characteristics. As a result of its superior thermal performance, the IPP100N06S2L05AKSA1 can easily be used in energy efficient designs by dissipating heat quickly and help reduce the cost of energy. It also has a high resistance to electrostatic discharge which makes it suitable for use in automotive and other harsh environments. Additionally, since it is an N-channel device, it offers high speed switching operation and can easily be used in high speed switching applications.
The IPP100N06S2L05AKSA1 is an ideal choice for engineers and designers needing high power switching capability in the range of 40-45V. With its fast switching frequency, ultra-low RDS(on), excellent thermal characteristics, and high resistance to electrostatic discharges, this device is a very versatile and reliable component for a variety of power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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IPP100N06S2L05AKSA1 Datasheet/PDF