IPW60R190C6FKSA1

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The IPW60R190C6FKSA1, also known as a DirectFET, is a power MOSFET. It’s a single N-Channel MOSFET with industry leading performance and wire-bonds for ease of manufacturing. The IPW60R190C6FKSA1, is an ideal device for use in high-power applications, withstanding a breakdown voltage of 190V, and is capable of withstanding drain-source voltage up to 175V. It delivers high efficiency as it contains very low on-resistance, as well as having fast switching due to its low gate charge.

The device has a power capability that is unprecedented for discrete products. It has low gate charge that helps to reduce switching losses and improve overall efficiency, low on-state resistance that keeps conduction losses to a minimum. It also provides the highest levels of dv/dt and avalanche ruggedness in a single device to protect against switch-on surge events. With its ultra-low gate impedance it is capable of very fast switching speeds.

The IPW60R190C6FKSA1 is a normally-off device. Its operating Principles are based on the principles of an insulated-gate bipolar transistor (IGBT). Instead of using a bipolar transistor to control device operation, it uses an insulated gate, hence the name FET. In this device, a signal applied to the gate will control the flow of current through the channel. The signal can be in the form of a voltage or current, just like in an IGBT.

The IPW60R190C6FKSA1 can be used in many applications due to its wide temperature range and low-current operation. It can be used to protect over-voltages, control high-current loads, regulate current in circuits, and regulate voltage levels in noise-sensitive circuits. In consumer electronics and automobiles, MOSFETs are used for power control and protection, motor drive, and as switches and sensors. Its use can also be found in solar cells, fuel cells, LEDs and other power switching devices. Its use can also be found in semiconductor manufacturing, aerospace, and robotics.

The IPW60R190C6FKSA1 is designed with a low on-resistance, allowing it to handle high-currents with minimal loss. With its low gate charge and very low gate impedance, it can achieve fast switching and can be used in high-frequency circuits. Due to its high breakdown voltage, it is capable of withstanding larger voltage spikes and providing better protection against over-voltage failures. With its excellent avalanche ruggedness, it is capable of handling large pulse currents with minimal loss. It has a higher thermal resistance than other MOSFETs, allowing it to operate in high-temperature environments.

The IPW60R190C6FKSA1 is a very good choice for applications requiring high-power operation as it combines industry leading performance and reliability. With its low-current operation, fast switching speeds, and wide temperature range, it can be used in a variety of applications, from consumer electronics to power control and protection. It is also a reliable device due to its low gate charge, low gate impedance, and avalanche ruggedness.

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