IRD3CH53DB6 Allicdata Electronics
Allicdata Part #:

IRD3CH53DB6-ND

Manufacturer Part#:

IRD3CH53DB6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE GEN PURP 1.2KV 100A DIE
More Detail: Diode Standard 1200V 100A Surface Mount Die
DataSheet: IRD3CH53DB6 datasheetIRD3CH53DB6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 270ns
Current - Reverse Leakage @ Vr: 2µA @ 1200V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Description

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The IRD3CH53DB6 is part of the Rectifiers – Single category, which contains a wide range of diodes with a single junction, meaning it has two active elements. Diodes are used to pass current in one direction, whilst blocking current in the other direction, allowing for the directed flow of electricity.

The IRD3CH53DB6 is a type of Fast-recovery rectifier, which is capable of switching quickly from on to off and vice versa. This is the result of its soft recovery characteristic, meaning it can be quickly and accurately recovered. This makes it ideal for a variety of applications, such as fast switching displays and high-frequency circuits.

The IRD3CH53DB6 can be used in a variety of circuits, including AC to DC power supplies, electronic switch and fan speed control circuits and small signal inverters. It can also be used in paint drying systems, solar power systems and audio power amplifiers, as well as in a variety of other applications.

The IRD3CH53DB6 has a forward voltage drop of 1.2V and a forward current rating of 2.5A. It has an operating temperature range of -55°C to 150°C and an operating frequency range of 1KHz to 1MHz. It is also capable of handling reverse surge voltages of up to 400V.

The IRD3CH53DB6 works on the principle of a diode, allowing the flow of current in only one direction. It consists of a semiconductor material, usually made of silicon, which is doped with impurities that create a P-N junction. When the diode is forward biased, a small potential difference is created across the junction, allowing the electrons to cross and current to flow. When it is reverse biased, the junction is not crossed, and no current flows.

The IRD3CH53DB6 also has a reverse recovery charge charge of Qrr, which is the amount of charge that a diode absorbs while switching from reverse to forward biased. This is important, as a device with a lower Qrr will dissipate less power, improving efficiency and performance.

The IRD3CH53DB6 is designed for efficient, low-cost power conversion applications, providing reliable switching with low forward voltage drop. Its soft recovery feature and low reverse recovery charge, combined with its operating temperature range and reverse surge voltage rating, make it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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