| Allicdata Part #: | IRF1010EZPBF-ND |
| Manufacturer Part#: |
IRF1010EZPBF |
| Price: | $ 1.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 75A TO-220AB |
| More Detail: | N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-2... |
| DataSheet: |  IRF1010EZPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.18000 |
| 10 +: | $ 1.14460 |
| 100 +: | $ 1.12100 |
| 1000 +: | $ 1.09740 |
| 10000 +: | $ 1.06200 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 140W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2810pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 51A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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IRF1010EZPBF is an efficient, powerful, and versatile single N-channel enhancement mode MOSFET. Designed with advanced High-Voltage technology, it offers very low on-resistance, high gate source breakdown voltage, and faster switching speed. The IRF1010EZPBF is the perfect choice for applications that require moderate input power, low cost, and minimum conduction loss, such as power management, or other applications such as battery charging and powering mobile devices, or other high frequency circuits.
The IRF1010EZPBF can act as a single switch for low to moderate load currents, as well as provide high power in applications where power dissipation and efficiency are critical. By virtue of its optimal combination of low on-resistance and high voltage breakdown, the IRF1010EZPBF is suitable for a wide range of power management applications. It is also suitable for driving high power loads and switching high currents.
The IRF1010EZPBF is a type of field effect transistor, specifically a metal oxide semiconductor field-effect transistor, also known as a MOSFET. Like other transistors, it has three terminals: the Drain, Source and Gate. The MOSFET works by using electric fields to switch on and off. When a voltage is applied to the Gate, it creates an electric field, which causes an inversion layer to form on the Surface of the MOSFET. This results in an increase in conductivity from the Drain to the Source, making the Mosfet “on”.
The IRF1010EZPBF has built-in features, such as a low-gate-input capacitance, which allows for an increase in switching speed without increasing load loss; as well as low gate-input capacitance of 130pF, enabling the MOSFET to switch with minimal losses. The IRF1010EZPBF also has a high drain voltage, up to 40V, making it suitable for high and low power management applications. It also has a low RDS(on), making it suitable for low power loss applications.
Furthermore, the IRF1010EZPBF is an N-channel device, which means that current flows from the Drain to the Source when they are at different potentials. This type of transistor is used most commonly in switching and power management applications because it is able to transfer power from one side to the other very efficiently. The Drain and Source of the IRF1010EZPBF can be connected to different voltage levels in order to switch between them.
The IRF1010EZPBF also is equipped with a high speed, low resistance gate-source output insulation, which ensures efficient and reliable operation even in high-frequency signals. The gate-source voltage ratings on this device are compatible with many logic IC families, making it possible to control high power devices with low-level logic ICs.
The IRF1010EZPBF is designed to handle high power with minimal losses. With its low on-resistance and high voltage breakdown, it is an excellent choice for many power management applications. The low gate-input capacitance of the IRF1010EZPBF makes it an ideal choice for applications that require fast switching and efficient power transfer. Its high drain voltage and low resistance have made it suitable for high power load and high current switching applications. The IRF1010EZPBF is the perfect transistor for applications that require cost-effective and reliable power management.
The specific data is subject to PDF, and the above content is for reference
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