IRF1104STRL

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The IRF1104STRL is a field-effect transistor (FET) developed by International Rectifier. It belongs to the single portion of the MOSFET family. The IRF1104STRL extends the popular family of high temperature, low-voltage products.

The device exhibits superb characteristics like excellent thermal resistance, current conduction efficiency and a wide operating temperature range. It is suitable for a variety of high-temperature applications and works in the temperature range of -55 to 150°C.

The device is designed to use a low-voltage potential and features fast switching times. It is composed of a monolithic substrate of silicon and is ideal for DC motor controllers, robotics and power circuits.

The IRF1104STRL works on the principle of metal oxide semiconductor (MOS) technology. This enables the device to deliver high switching speeds with low gate charge.

It works on the principle of field-effect and uses a metal gate, with an oxide layer on the gate interface, to control and regulate the current in the channel. When a positive voltage is applied to the gate, it attracts the electrons, making the surface charge negative. This results in a depletion of carriers in the channel, inhibiting further current flow.

The device features a maximum channel-doping concentration of 1.5 × 1015. It also contains a depletion-layer capacitance between the drain and the body and a gate-drain capacitance between the gate and the drain.

Other features of the FET include a maximum power dissipation of 1.6 W, a maximum drain-source voltage of 200 V and a drain saturation current of 11 A. It is available in a space-saving, surface-mount type package.

The IRF1104STRL is effective in a variety of applications, ranging from power management and load switching to audio entertainment and industrial automation systems. It can also be used in other industrial and automotive applications.

The overall performance of the device depends on its production component and process technology. To ensure optimum results, it is essential to acquire high-quality components and conduct thorough inspections and quality tests during the manufacturing process.

In conclusion, the IRF1104STRL is a single MOSFET device designed for use in high-temperature, low-voltage applications. It uses a metal oxide semiconductor technology, making it suitable for power management, audio and industrial automation systems. The device offers excellent characteristics, like thermal resistance and high switching speed, along with a wide range of operating temperature.

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