IRF4104GPBF Allicdata Electronics
Allicdata Part #:

IRF4104GPBF-ND

Manufacturer Part#:

IRF4104GPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N CH 40V 75A TO220AB
More Detail: N-Channel 40V 75A (Tc) 140W (Tc) Through Hole TO-2...
DataSheet: IRF4104GPBF datasheetIRF4104GPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF4104GPBF is a Injection-Locked FET (Insulated Gate Field-Effect Transistor), or commonly referred to a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It belongs to the category of single-gate devices, and can switch DC electricity flow from one electrically isolated source to another.

This specific MOSFET device makes use of a unique technology, whereby a second transistor injects signals into the first transistor, which improves the electrical power switching performance, and makes it better suited for applications requiring fast operating and reliable performance. This technology also helps in producing a low output capacitance and resistance, making IRF4104GPBF ideal for high switching-frequency use.

The primary application field of IRF4104GPBF is power and load switching, especially in automotive applications, though it is also suitable for wireless communication applications. Its features, combined with its small size, make it the ideal choice for switching applications where size and speed are both important.

In terms of working principle, IRF4104GPBF is a simple two-transistor device. The first transistor is used for signal injection. The second transistor is the main switch, which is activated by the signal injected by the first transistor, allowing the current to travel from the input to the output. In this way, it is able to switch the current on and off, making it ideal for use in power and load switching applications.

As mentioned earlier, the main benefit of this type of MOSFET is its performance in high-frequency switching applications, such as automotive applications. Other benefits include its ability to handle high power, its low output capacitance and resistance, and its reliability in operation.

In conclusion, IRF4104GPBF is a highly versatile and reliable device that can be used in a variety of applications, including power and load switching, automotive applications, and wireless communication applications. Its features and small size make it an ideal choice for applications where size and speed are both important.

The specific data is subject to PDF, and the above content is for reference

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