Allicdata Part #: | IRF7233TR-ND |
Manufacturer Part#: |
IRF7233TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 12V 9.5A 8-SOIC |
More Detail: | P-Channel 12V 9.5A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | IRF7233TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 600mV @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 9.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF7233TR is a single N-type field effect transistor (FET). It is used in a variety of applications in both consumer and commercial products, such as computers, televisions, power supplies, and automotive products. Generally, FETs are used for their excellent high frequency properties. In the case of the IRF7233TR, it is an enhancement mode device typically used in switching circuits.
The IRF7233TR is a commonly used power transistor. It has a maximum drain voltage of 30-volts and a drain current at 25C of up to 30-amperes. The maximum power dissipation of the transistor is 150 Watts and the package type is a TO-220AB.
The device is made up of a single FET, which has excellent high frequency characteristics. The package of this device contains three leads, a drain, a source and a gate. The two current flow terminals are the drain and source. The gate lead is used to control the current flow between the source and the drain. In the case of the IRF7233TR it is an enhancement mode device, thus the gate lead is used to control the flow of current by increasing the voltage from 0 to 10 volts.
This FET is ideal for switching applications. It can be used in high frequency switching circuits such as for motor control or in the amplification of oscillator circuits. It can also be used in low frequency switching applications such as for analog switching or power control applications. In the case of power supply control, the device can be used to control the voltage, current and other parameters of the supply.
The operating temperature range of the IRF7233TR is between -55C to 175C and the maximum junction temperature is 175C. In order to ensure the best performance of the device, proper heat sink must be used. This can be achieved by providing the device with a proper air flow.
As with all FETs, the IRF7233TR must be installed properly to ensure its optimum performance. The leads should be properly aligned when installing the device. The device should also be mounted on a circuit board with a low-impedance ground plane. Proper bypass capacitors should also be used to avoid possible oscillations.
The IRF7233TR is a single N-type FET commonly used in a variety of low to high frequency switching applications. It has excellent high frequency characteristics and is capable of switching very large amounts of current. It has a maximum drain voltage of 30-volts and a drain current at 25C of up to 30-amperes. Proper installation and adequate cooling are required for best performance.
The specific data is subject to PDF, and the above content is for reference
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