Allicdata Part #: | IRF734-ND |
Manufacturer Part#: |
IRF734 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 450V 4.9A TO-220AB |
More Detail: | N-Channel 450V 4.9A (Tc) 74W (Tc) Through Hole TO-... |
DataSheet: | IRF734 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A (Tc) |
Drain to Source Voltage (Vdss): | 450V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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An IRF734 is a type of field-effect transistor (FET) that is a member of the metal-oxide semiconductor FET (MOSFET) family. FETs and MOSFETs are used in many electronic circuits, and they provide a great deal of functionality due to their unique characteristics. The IRF734 is a single-type MOSFET that offers good performance, reliability and low on-resistance.
The IRF734\'s basic design is similar to those of other MOSFETs. It has three terminals, each connected to a different electrode. The first electrode—the source— is connected to the negative side of the power supply. The second—the gate—acts as a switch that controls the flow of current between the source and the third terminal, the drain. When the gate is given a voltage, current is allowed to flow from the source to the drain; otherwise, the current is blocked. That difference between the on and the off states allows FETs to act as logic gates or switches, controlling the flow of current through a circuit.
The IRF734 features a number of features that set it apart from other MOSFETs. Its relatively low on-resistance allows it to pass more current with comparatively less voltage— up to 11A with a gate-source voltage of 4.5V. That makes the IRF734 more efficient than some other MOSFETs when it comes to power management.
The IRF734 also offers good thermal stability, thanks to features like its double-diffused MOS (DMOS) architecture. That structure helps to ensure that the device remains in its fully off state even when its temperature is increased. The change in temperatures can lead to a shift in the boundaries of the source and drain; the DMOS design allows the device to keep functioning even under such conditions.
The IRF734 is applied in a range of areas, including automotive electronics and consumer electronics. In some instances, the device may be used in simple switching applications, where it serves as a simple on/off switch. In other cases, its properties can act as a driver to control the speed of a motor, or it can be used to regulate the power going to other components in a circuit. In high-power circuits, the IRF734 can be used as a load switch to control the current that flows into the circuit.
In many high-frequency circuits, the low on-resistance of the IRF734 makes it useful for its ability to handle high-frequency signals without introducing much distortion. In some cases, the device is used to switch a signal between different nodes; for example, it could be used to switch a signal from an amplifier to a speaker or from a transmitter to an antenna. It can also be used to buffer high-frequency signals and keep them away from delicate device.
Overall, the IRF734 offers a wide range of features and benefits that make it suitable for a variety of applications. Its combination of good performance, low on-resistance, and reliable thermal stability make it a good choice for power management, switching, and buffer applications. This makes the device a popular choice in automotive, consumer, and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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