| Allicdata Part #: | IRF7455PBF-ND |
| Manufacturer Part#: |
IRF7455PBF |
| Price: | $ 0.99 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 15A 8-SOIC |
| More Detail: | N-Channel 30V 15A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: | IRF7455PBF Datasheet/PDF |
| Quantity: | 4284 |
| 1 +: | $ 0.90090 |
| 10 +: | $ 0.79569 |
| 100 +: | $ 0.62906 |
| 500 +: | $ 0.48785 |
| 1000 +: | $ 0.38514 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3480pF @ 25V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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IRF7455PBF is a high voltage, fast switching MOSFET transistor with a maximum drain-source voltage of -25V, a maximum drain current of 7.5A and a maximum transconductance of 350 µS at 25V. It is ideal for applications such as motor inverters, motor controllers, in-vehicle inverters, power supply voltage range extensions, and other applications where a high frequency, high voltage, and high power MOSFET is needed.
IRF7455PBF is a single MOSFET, which means that it only has one gate. The gate control the drain and source characteristics of the MOSFET and can be used to switch the MOSFET\'s current flow on and off. The gate is controlled by a voltage source, which is usually connected to the source pin. When the voltage source is connected, the voltage applied to the gate will cause the body diode of the MOSFET to be forward-biased and turn the transistor on, allowing the flow of current through the drain and source. When the voltage source is disconnected, the voltage applied to the gate will cause the body diode of the MOSFET to be reversed-biased and turn the transistor off, stopping the flow of current through the drain and source.
The Drain-Source voltage rating of the IRF7455PBF is -25V which allows it to be used in higher voltage switching applications. The IRF7455PBF also offers a low drain-source on-state resistance of 2.8Ohm and a fast switching speed of 150 ns from on to off or off to on.
The IRF7455PBF is suitable for a wide range of high power applications, such as DC-DC convertors, motor controllers, inverters, power supply voltage extensions and high frequency switching applications. It can be used in switch mode power supplies (SMPS) where high efficiency and rapid current commutation is required.
The IRF7455PBF is also suitable for controlling high speed switching of large loads with the addition of a driver IC. When used with the right driver IC, the IRF7455PBF can be used to switch heavy loads of several hundred amps while switching frequencies of up to 1 kHz are possible.
The IRF7455PBF is a popular choice for its versatility and low on-state resistance. It is an excellent choice for applications where a high-performance and cost-effective device is needed.
The specific data is subject to PDF, and the above content is for reference
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IRF7455PBF Datasheet/PDF