| Allicdata Part #: | IRF7468PBF-ND |
| Manufacturer Part#: |
IRF7468PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 9.4A 8-SOIC |
| More Detail: | N-Channel 40V 9.4A (Ta) 2.5W (Ta) Surface Mount 8-... |
| DataSheet: | IRF7468PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2460pF @ 20V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 15.5 mOhm @ 9.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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IRF7468PBF are high-performance insulated gate field effect transistors with low on-state resistance, low gate charge and extremely low threshold voltage. It has a better performance compared to traditional MOS FETs. So what is the application field and working principle of IRF7468PBF?
Application Field Of IRF7468PBF
IRF7468PBF is a kind of silicon N-channel MOSFET, so it is widely used in switching power supply, DC-DC adapter, audio amplifier, DC brushless motor drive and so on. Among them, the current is the most common application in industrial and commercial fields, such as portable DVD, electric door and window, lighting control, electric automobiles and other areas where fast switch and low loss heat generation are required.
In automotive applications, IRF7468PBF can be used as switches for headlights, indicator lights and electric windows. In the designs of switch electric equipment, IRF7468PBF can also be used for power transmission and distribution. Its DIODE anti-reflux protection characteristics and ESD protection properties can effectively reduce the operating current, thus saving energy and protecting the components from being damaged by the external environment.
Working Principle of IRF7468PBF
Working principle of IRF7468PBF is related to the electric field effect. When an electric field is applied to the gate of the MOSFET, the number of electrons in the channel will be affected. As the electric field increases, the charge carrier density also increases, reducing the resistance of the channel. When the field is reduced, the resistance of the channel also rises accordingly, thus controlling the current.
When the gate voltage of the MOSFET is higher than a certain level, called the "threshold voltage", the MOSFET enters the ON state. In other words, the current passes through the channel between the source and the drain. The current is proportional to the gate voltage, and when the gate voltage is increased, the current increases.
IRF7468PBF transistors feature a low threshold voltage, which means that even if the gate voltage is slightly higher than the threshold voltage, the current will pass through the channel between the source and the drain. This comes in handy when attempting to minimize power consumption, as it allows for more efficient current control.
Conclusion
From the above, we can conclude that the application field and working principle of the IRF7468PBF are mainly in switching power supply, DC-DC adapter, audio amplifier, DC brushless motor drive and automotive application. And its working principle is related to the electric field effect. The electric field increases the charge carrier density, thus reducing the resistance of the channel. When the gate voltage is higher than the threshold voltage, the current passes through the channel between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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IRF7468PBF Datasheet/PDF