Allicdata Part #: | IRF830STRR-ND |
Manufacturer Part#: |
IRF830STRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 4.5A D2PAK |
More Detail: | N-Channel 500V 4.5A (Tc) 3.1W (Ta), 74W (Tc) Surfa... |
DataSheet: | IRF830STRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 610pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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?The IRF830STRR is a type of single-channel field effect transistor (FET) used for different applications. A field effect transistor is a kind of transistor that utilizes an electric field to regulate current flow. It is used as an amplifier in low voltage circuits; it works in a similar way as a vacuum tube, but has a much lower power consumption and is more durable.
The IRF830STRR is one of the most commonly used FETS on the market. It is a single-channel type, meaning it has only one source and one drain. The most common application for this transistor is power switching and voltage regulating, although it can be used in a wide range of other applications. The IRF830STRR has a maximum voltage of 200V and a maximum power of 25W.
The working principle of the IRF830STRR is relatively simple. When the gate is left open, there is no current in the channel and the transistor is in an off state. When the gate is triggered and a positive voltage is applied, current will start flowing in the channel. This is called an enhancement-mode transistor; the channel current is determined by the gate voltage and the drain voltage.
The IRF830STRR also has a number of important characteristics, such as on-resistance, gate capacitance, and body-diode conduction. The on-resistance of the transistor is important because it determines how much current will flow when the gate is triggered. The gate capacitance is the amount of charge stored in the gate; the higher the gate capacitance, the lower the switching speed. The body diode conduction is the amount of current that can flow between the source and the drain when the gate is closed.
The IRF830STRR can be used in a variety of applications, such as switching power supplies, DC-DC converters, relay controls, and inverter applications. It is also used to control the current and voltage in applications such as high-efficiency peak power tracking systems, switched-mode power supplies, and voltage regulators.
Overall, the IRF830STRR is a useful and versatile transistor for a wide range of applications. Its low-power consumption and durability makes it especially useful for voltage-regulating and switching applications. By understanding its working principle, it is possible to take advantage of its characteristics to create a wide range of efficient and reliable circuits.
The specific data is subject to PDF, and the above content is for reference
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