| Allicdata Part #: | IRF8721PBF-ND |
| Manufacturer Part#: |
IRF8721PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 14A 8-SOIC |
| More Detail: | N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: |  IRF8721PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1040pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
Description
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IRF8721PBF is an N-Channel enhancement-mode Field-Effect Transistor (FET) which is suitable for switching and amplification applications. It is designed to provide very low on-resistance to reduce the power loss. IRF8721PBF has been optimized with the combination of wider gate oxide breakdown voltage, SOA and fast switching with optimal body series resistance. This device is suitable for use in low voltage applications ranging from dc-dc converters, motor drivers, and laptop computers.
The IRF8721PBF device is a high-density, depletion-mode, N-Channel MOSFET, fabricated in a standard cell process with an advanced cell design and fabrication technology that ensures good switching behavior and on-resistance performance. This device is optimized for low on-resistance and low gate charge. It has an integrated ESD protection mechanism built into the source pin. The source pin is connected to a low on-resistance diode connected N-channel MOSFET element.
The Working Principle of IRF8721PBF is similar to that of other field-effect transistors. The current flow through this device is regulated by the gate voltage. A voltage applied to the gate allows current to flow through the channel (defined by the silicon) between the source and drain terminals. The current flow through the channel is proportional to the gate voltage, and the on-resistance is determined by the channel length, width and gate voltage. The gate voltage controls the number of electrons that can occupy the channel, which determines the current flow through the device.
The IRF8721PBF is commonly used in applications such as dc-dc converters, motor controllers, lighting control and power management circuits. As a switch, the device is used to convert a low-voltage digital signal into a high-current switching signal. For example, it can be used to control a motor’s speed or to switch between different power supply voltages. In amplifiers, the IRF8721PBF is used to boost the power of an incoming signal. These devices can also be used in low-noise amplifiers, active grids and multiplexers.
The IRF8721PBF can handle a wide variety of applications due to its low input capacitance and low output capacitance. The device features an extended-generally-low-voltage (EGLV) gate drive, which reduces the voltage level required to turn the MOSFET on and off. This makes it well suited for applications requiring the driving of an inductive load with a low level of gate voltage swing. The device also has an improved thermal shutdown mechanism, which reduces gate leakage at low gate voltages.
In conclusion, the IRF8721PBF is a popular choice for high-efficiency, low-power switching and amplification applications. It offers industry leading performance in terms of on-resistance, gate charge, switching times and ESD robustness. It is suitable for use in low voltage applications ranging from dc-dc converters, motor drivers, and laptop computers.
The IRF8721PBF device is a high-density, depletion-mode, N-Channel MOSFET, fabricated in a standard cell process with an advanced cell design and fabrication technology that ensures good switching behavior and on-resistance performance. This device is optimized for low on-resistance and low gate charge. It has an integrated ESD protection mechanism built into the source pin. The source pin is connected to a low on-resistance diode connected N-channel MOSFET element.
The Working Principle of IRF8721PBF is similar to that of other field-effect transistors. The current flow through this device is regulated by the gate voltage. A voltage applied to the gate allows current to flow through the channel (defined by the silicon) between the source and drain terminals. The current flow through the channel is proportional to the gate voltage, and the on-resistance is determined by the channel length, width and gate voltage. The gate voltage controls the number of electrons that can occupy the channel, which determines the current flow through the device.
The IRF8721PBF is commonly used in applications such as dc-dc converters, motor controllers, lighting control and power management circuits. As a switch, the device is used to convert a low-voltage digital signal into a high-current switching signal. For example, it can be used to control a motor’s speed or to switch between different power supply voltages. In amplifiers, the IRF8721PBF is used to boost the power of an incoming signal. These devices can also be used in low-noise amplifiers, active grids and multiplexers.
The IRF8721PBF can handle a wide variety of applications due to its low input capacitance and low output capacitance. The device features an extended-generally-low-voltage (EGLV) gate drive, which reduces the voltage level required to turn the MOSFET on and off. This makes it well suited for applications requiring the driving of an inductive load with a low level of gate voltage swing. The device also has an improved thermal shutdown mechanism, which reduces gate leakage at low gate voltages.
In conclusion, the IRF8721PBF is a popular choice for high-efficiency, low-power switching and amplification applications. It offers industry leading performance in terms of on-resistance, gate charge, switching times and ESD robustness. It is suitable for use in low voltage applications ranging from dc-dc converters, motor drivers, and laptop computers.
The specific data is subject to PDF, and the above content is for reference
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