| Allicdata Part #: | IRF9Z24NSTRR-ND |
| Manufacturer Part#: |
IRF9Z24NSTRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 55V 12A D2PAK |
| More Detail: | P-Channel 55V 12A (Tc) 3.8W (Ta), 45W (Tc) Surface... |
| DataSheet: | IRF9Z24NSTRR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 175 mOhm @ 7.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF9Z24NSTRR is a part of a well-established series of components produced by Infineon, the well known semiconductor manufacturer. It is a high current, single N-channel enhancement mode MOSFET, most commonly used for automotive applications.
The IRF9Z24NSTRR is a unipolar device, meaning that it relies on the movement of electrons, rather than protons, as the main mode of current flow. There are two main types of transistors: junction field effect transistors (JFETs) and metal oxide semiconductor field effect transistors (MOSFETs). The IRF9Z24NSTRR is an example of the latter.
A MOSFET works by controlling the flow of electrons through a channel of semiconductor material, consisting of four regions. The gate is a conductive metal plate positioned above the substrate, and this is where the voltage is applied, allowing the current to start flowing through. The voltage applied to the gate is usually relatively small but the current it controls is usually very large when compared to the gate voltage. This is due to the gate being able to \'pinch off\' the current by making the resistance from the source to the drain very high.
The source acts as the connection for the electrons to the negative terminal of the power source, and the drain is the connection to the positive terminal. The region between the source and the drain is known as the channel, and this is where the actual current flow takes place. The channel is made of semiconductor material, which has an effect on how much current is allowed through.
In the IRF9Z24NSTRR, the gate is made of polysilicon and is surrounded by a gate oxide and the source and drain regions are made of doped polysilicon. The whole assembly is protected by a polyimide layer, which is used to stop pollutants and oxidation. All of these materials are used to increase the current capacity of the device and make it more robust.
The IRF9Z24NSTRR, with its single N-channel, is most suited to applications where the polarity of most of the current must be the same. For example, it can be used to switch small devices, such as LED lights, on and off. In these types of applications, the single N-channel MOSFET is preferred due to its lower power consumption and the ability to draw less current from the power source.
It is also commonly used to connect multiple devices in series, such as in audio amplifiers, where it is very important that the flow of current is kept in the same direction. In such cases, the IRF9Z24NSTRR can be used to identify the direction of current movement and control it accordingly. The device can also be used to regulate the current flow, ensuring that it remains consistent, no matter what the load.
Aside from automotive applications, the IRF9Z24NSTRR is also widely used in audio amplifiers, motor control circuits, power supplies and solar panel power systems. Its ability to handle large currents and low voltage makes it a great choice for many applications.
In conclusion, the IRF9Z24NSTRR is an example of single N-channel MOSFET with an impressive current capacity and good reliability for a range of applications. By understanding the basic principle behind MOSFETs, users can use them with confidence in a variety of projects.
The specific data is subject to PDF, and the above content is for reference
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IRF9Z24NSTRR Datasheet/PDF