IRF9Z34NSTRLPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF9Z34NSTRLPBF is a field effect transistor (FET) specifically designed to operate as a switch in power electronic circuits. Characterized by low drain-source ON resistances, the IRF9Z34NSTRLPBF is particularly suitable for high power applications within the industrial, automotive and consumer markets. This article will explain the application field and working principle of the IRF9Z34NSTRLPBF.

The IRF9Z34NSTRLPBF is a popular choice for efficient power regulation and power conversion, particularly in energy management and motor control applications. This device is constructed of an oxide-protected silicon gate with an upper and lower drain region, and a N-type source. The IRF9Z34NSTRLPBF has low gate-source capacitances and drain-source ON resistances, enabling it to switch energy quickly and efficiently. It supports a drain-source current up to 30 amps and is capable of withstanding up to 13 volts of drain-source breakdown voltage. In addition, the IRF9Z34NSTRLPBF can be used in high temperature applications, as it is specified for operation up to 175 degrees Celsius.

In terms of working principle, the IRF9Z34NSTRLPBF works in much the same way as a standard field effect transistor. When the gate voltage is increased above the threshold voltage, the device begins to conduct between the source and drain, allowing current to flow. As the gate voltage increases further, the current increases as well. The gate can then be decreased to its threshold voltage level in order to "turn off" the device again, disrupting the flow of current.

The IRF9Z34NSTRLPBF is thus particularly suitable for power control and power management applications requiring high current, high voltage, and high temperature tolerance. Its low gate-source capacitances and drain-source ON resistances make it well-suited for fast switching, while its high breakdown voltage make it safe to use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference