| Allicdata Part #: | IRFB23N15DPBF-ND |
| Manufacturer Part#: |
IRFB23N15DPBF |
| Price: | $ 1.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 23A TO-220AB |
| More Detail: | N-Channel 150V 23A (Tc) 3.8W (Ta), 136W (Tc) Throu... |
| DataSheet: | IRFB23N15DPBF Datasheet/PDF |
| Quantity: | 1003 |
| 1 +: | $ 1.29000 |
| 10 +: | $ 1.25130 |
| 100 +: | $ 1.22550 |
| 1000 +: | $ 1.19970 |
| 10000 +: | $ 1.16100 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 136W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFB23N15DPBF is a type of Field Effect Transistor, or FET. FETs are widely used in a variety of electronic equipment, although most electronics consumers are familiar with the more widely used type of transistor, the Bipolar Junction Transistor, or BJT. FETs are similar to BJTs in that they are voltage-driven switches, but they are different in both design and operation.
FETs have been around for a long time, and the IRFB23N15DPBF is one example of a modern-day FET. It is a type of MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, which is a type of FET that is highly efficient and cost-effective. The IRFB23N15DPBF is a single-channel MOSFET, which means that it has only one “gate” and one “drain” that allow it to be controlled by one applied voltage source, making it quite a simple component to use in many applications.
The IRFB23N15DPBF can be used in many different applications. It is commonly used as a high-side switch, being able to switch higher voltage sources on and off. This makes it very popular in motor control applications, and can be found in equipment such as motor drives, lighting systems and solar panel inverters. It is also popular in electrical power distribution, being used in applications such as power factor correction and harmonic filtering in renewable energy.
The IRFB23N15DPBF also has a unique operating principle compared to other types of FETs. Unlike BJTs, which rely on a charge carrier for their operation, MOSFETs rely on the migration of electrons or “holes” through the gate insulator. When a voltage is applied to the gate, it creates a “gate electric field,” drawing the electrons or holes to the gate-drain junction. This in turn creates a channel through which current can flow.
The IRFB23N15DPBF has a relatively low threshold voltage, meaning that it can be operated with lower voltage sources, making it suitable for use in more sensitive electronics applications. Additionally, its very low current-drain characteristics and high frequency capability make it ideal for power-sensitive and high speed applications such as motor control, inverters, and power supplies.
In summary, the IRFB23N15DPBF is a single-channel MOSFET used in a variety of applications, including motor control, power distribution, and power factor correction. It is a highly efficient and cost-effective type of FET, featuring a low threshold voltage and a low-drain current. Its unique operating principle relies on the migration of electrons or “holes” through the gate insulator, allowing it to be operated at lower voltages and higher frequencies, making it suitable for power-sensitive and high speed applications.
The specific data is subject to PDF, and the above content is for reference
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IRFB23N15DPBF Datasheet/PDF