IRFC4115ED

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IRFC4115ED is an N-channel Enhancement-mode Field Effect Transistor (FET) designed using the HEXFET® process, which is invented by International Rectifier. IRFC4115ED has a drain-source voltage rating of 30V and a maximum saturated drain current of 2.4A. Therefore, it is suitable for use in power control applications, such as motor control and automation. The device is offered in a small thermal improved 3-lead SOT227 package, which makes it suitable for use in various applications where board space is scarce.

The working principle behind the operation of the IRFC4115ED device is fairly simple. When no voltage is applied to the gate terminal of the FET, the device is off and no current flows between the drain and source terminals. However, when a voltage is applied to the gate terminal, the device turns on and current begins to flow between the drain and source. This is why the IRFC4115ED is known as an “enhancement” device, as the voltage applied to the gate terminal enhances or increases the current flow. The device will remain in the on state until the voltage at the gate terminal drops back below the turn-on threshold.

Due to its low on-state resistance and high breakdown voltage, the IRFC4115ED can be used in a variety of applications. The device can be used in power control applications, such as motor control and automation. The device is also suitable for use in switch mode power supply (SMPS) and power factor correction (PFC) applications. Additionally, the device is suitable for use in DC-DC converters, weld-machines and any other application requiring a low on-state resistance N-channel MOSFET.

The IRFC4115ED has a low gate charge and is therefore suitable for use in high frequency/high switching speed applications. Additionally, the device has a fast switching speed making it suitable for use in high frequency power conversion applications. The device also has a low input capacitance, making it an ideal choice for switching applications that require low power dissipation. The device also offers low noise operation and high immunity to electromagnetic interference (EMI) making it suitable for use in sensitive applications.

In conclusion, the IRFC4115ED is a rugged and reliable N-channel enhancement-mode Field Effect Transistor (FET). The device is available in a small thermal improved 3-lead SOT227 package and is suitable for use in a variety of applications, such as power control and automation, smps, PFC, DC-DC converters, weld-machines and any other application requiring a low on-state resistance N-channel MOSFET. The device benefits from a low gate charge, fast switching speed, low input capacitance, low noise operation and a high immunity to electromagnetic interference, making it suitable for use in a variety of high frequency/high switching speed applications.

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