Allicdata Part #: | IRFHM4234TRPBFTR-ND |
Manufacturer Part#: |
IRFHM4234TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 20A PQFN |
More Detail: | N-Channel 25V 20A (Ta) 2.8W (Ta), 28W (Tc) Surface... |
DataSheet: | IRFHM4234TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | FASTIRFET™, HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1011pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 2.8W (Ta), 28W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TQFN Exposed Pad |
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IRFHM4234TRPBF Application Field and Working Principle
IRFHM4234TRPBF, also known as IRF4234, is a complimentary metal oxide semiconductor (CMOS) field effect transistor (FET) that belongs to the NFET 4-series family from International Rectifier (IR). It is a wide-voltage, single N-channel FET type which is a discreted FET that has a drain-source voltage of 30V, maximum junction temperature of 175°C, and includes an exposed metal pad for heatsinking, gate-source ESD protection, and gate-source and gate-drain electrostatic content protection. IRF4234TRPBF is one of the most widely used FETs in the power management industry.
IRFHM4234TRPBF can be used in many applications, such as audio amplifiers, power regulators, power amplifiers, home entertainment products and other kinds of electronic equipment. Due to its wide voltage, it is also suitable for use in high-power switching, high-speed switching, high-voltage switching, and voltage control applications. IRFHM4234TRPBF has excellent thermal characteristics and high power density, making it ideal for use in applications where limited space is available.
The working principle of IRFHM4234TRPBF relies on the accumulation of a range of alternating current (AC) and direct current (DC) charges in a capacitive-like structure, between the drain and source terminal of the FET. The accumulation of charges occurs when the voltage applied between the drain and source terminals of the FET exceeds the threshold voltage. Below this threshold voltage, there is no current flowing between the drain and source terminals of the FET.
The working of IRFHM4234TRPBF can be divided into two parts – conductive and non-conductive. In the conductive phase, a small, specific gate voltage is applied to the gate terminal, which controls current flow between the drain and source terminals of the FET. The current flow is governed by the value of the gate voltage. In the non-conductive phase, no gate voltage is applied, causing the shut off of current flow between the drain and source terminals of the FET.
In conclusion, IRFHM4234TRPBF is a single N-channel FET type which has wide voltage, excellent thermal characteristics and high power density, making it suitable for use in audio amplifiers, power regulators, power amplifiers, home entertainment products and other kinds of electronic equipment. It is a widely used FET in the power management industry due to its excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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