| Allicdata Part #: | IRFHM830TRPBFTR-ND |
| Manufacturer Part#: |
IRFHM830TRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 21A PQFN |
| More Detail: | N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (T... |
| DataSheet: |  IRFHM830TRPBF Datasheet/PDF |
| Quantity: | 4000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.35V @ 50µA |
| Package / Case: | 8-VQFN Exposed Pad |
| Supplier Device Package: | PQFN (3x3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.7W (Ta), 37W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2155pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 40A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The IRFHM830TRPBF is a high-performance field-effect transistor (FET) from International Rectifier. It belongs to a family of transistors known as Metal Oxide Semiconductor Field Effect Transistors, or MOSFETs. This type of device is used to control the amount of current flowing through a circuit. The IRFHM830TRPBF is a single-channel MOSFET with a drain-source breakdown voltage of 800 volts, a RDS(on) resistance of 1.2 Ohms, and a maximum dynamic dV/dt of 200V/ns.
The IRFHM830TRPBF is a source-drain-profile N-channel FET transistor. It is commonly used in high-current applications due to its low resistance and high breakdown voltage. It can be used for switching and amplification applications as well. The device also has very low gate-source capacitance, which is beneficial for high-frequency switching applications.
The IRFHM830TRPBF is typically used in inverter circuits, motor control circuits and power supply circuits. It is also used in general-purpose and low-voltage switching applications. Its low on-state resistance, high blocking voltage and fast switching speed make it ideal for a wide variety of applications.
The mechanism behind the working of a MOSFET is based on the field effect principle. When a voltage is applied to the gate terminal of the device, an electric field is created. This electric field affects the conductivity of the channel region of the device and determines the current flowing through it. By adjusting the voltage at the gate terminal, it is possible to control the amount of current channeled through the device.
The IRFHM830TRPBF is designed to handle high current loads and is ideal for applications requiring low on-state resistance, high blocking voltage and fast switching speeds. Its low gate-source capacitance allows it to operate at high frequencies and makes it suitable for general-purpose, high-current and low-voltage switching applications.
The IRFHM830TRPBF is a source-drain-profile N-channel FET transistor. It is commonly used in high-current applications due to its low resistance and high breakdown voltage. It can be used for switching and amplification applications as well. The device also has very low gate-source capacitance, which is beneficial for high-frequency switching applications.
The IRFHM830TRPBF is typically used in inverter circuits, motor control circuits and power supply circuits. It is also used in general-purpose and low-voltage switching applications. Its low on-state resistance, high blocking voltage and fast switching speed make it ideal for a wide variety of applications.
The mechanism behind the working of a MOSFET is based on the field effect principle. When a voltage is applied to the gate terminal of the device, an electric field is created. This electric field affects the conductivity of the channel region of the device and determines the current flowing through it. By adjusting the voltage at the gate terminal, it is possible to control the amount of current channeled through the device.
The IRFHM830TRPBF is designed to handle high current loads and is ideal for applications requiring low on-state resistance, high blocking voltage and fast switching speeds. Its low gate-source capacitance allows it to operate at high frequencies and makes it suitable for general-purpose, high-current and low-voltage switching applications.
The specific data is subject to PDF, and the above content is for reference
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