Allicdata Part #: | IRFL110PBF-ND |
Manufacturer Part#: |
IRFL110PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 1.5A SOT223 |
More Detail: | N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surfac... |
DataSheet: | IRFL110PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRF110PBF is a single N-channel enhancement type vertical Field Effect Transistor (FET) that enables high-speed switching applications. It is suitable for use in a variety of applications such as amplifier circuits, motor driver circuits, switching power supplies and other applications. The device is also suitable for use in automotive applications, including automotive ECUs.
The IRF110PBF has a relatively low input capacitance, making it suitable for high-speed switching applications. The device also has a high-frequency switching capability and a fast rise time, making it ideal for applications such as switching power supplies and motor driver circuits. The device has a low on-state resistance, making it suitable for high current circuits. The device also has an extended temperature range, making it suitable for automotive applications.
The IRF110PBF is designed to be driven by low-voltage and low-power drivers. The device also features a low threshold voltage, making it suitable for use with logic level MOSFET drivers. The device is particularly well suited to applications such as motor driver circuits where a low-voltage, low-power driver is required.
The working principle of the IRF110PBF makes use of an N-channel MOSFET section as its switching element. The device is designed to be driven by a low voltage, low power driver and when it is activated, it absorbs the electric field of the control gate. This electric field causes electrons to migrate from the lower metal oxide semiconductor (MOS) of the device to the higher metal oxide semiconductor (MOS) of the device, thus creating a conductive path between the source and the drain of the device. The amount of current passing through the conducting path is proportional to the intensity of the electric field of the control gate. Thus, the voltage applied to the control gate will dictate the amount of current passing through the device.
The low on-state resistance of the device ensures low switching losses and improved efficiency. The high-frequency switching capability of the device allows for faster switching times, making it ideal for high-speed applications such as switching power supplies. The extended temperature range of the device makes it suitable for use in automotive applications and in other applications where extended temperature ranges are essential.
The IRF110PBF is a versatile device that can be used in a variety of applications. The device is well suited for use in amplifier circuits, motor driver circuits, switching power supplies and automotive applications. The extremely low input capacitance and fast rise time of the device make it well suited for high-speed switching applications, making it an ideal choice for a variety of applications. The device is also well suited for use in low-voltage and low-power driver circuits.
The specific data is subject to PDF, and the above content is for reference
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