IRFP360 Allicdata Electronics
Allicdata Part #:

IRFP360-ND

Manufacturer Part#:

IRFP360

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 23A TO-247AC
More Detail: N-Channel 400V 23A (Tc) 280W (Tc) Through Hole TO-...
DataSheet: IRFP360 datasheetIRFP360 Datasheet/PDF
Quantity: 75
Stock 75Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFP360 is an advanced power MOSFET, which can be widely used in the engineering and manufacturing industries. As an International Rectifier (IR) device, the IRFP360 has a high-quality design, which makes it suitable for various applications. This article will discuss the application field and working principle of the IRFP360.

The IRFP360 has excellent characteristics from both thermal and electrical perspectives. In terms of thermal performance, the IRFP360 has a low thermal impedance and a high junction-to-case thermal resistance. The thermal performance ensures that the device does not overheat during the operation. On the electrical side, the device has a low On-state resistance (RDS(on)), high-current capability and a low input capacitance (CISS). All these features ensure that the device can deliver high-performance power in a wide range of applications.

The IRFP360 is widely utilized in switching power supplies, motor drives, and power converters. The low RDS(on) of the device enables these circuits to attain high efficiency by reducing power dissipation. Also, the high-current capability of the device allows these circuits to deliver high output power. Furthermore, the low input capacitance of the device ensures the circuit’s stability when the supply voltage is high and the load current is low. Moreover, in terms of protection features, the IRFP360 has a wide body which helps dissipate heat quickly and eliminates the need for a heat sink.

In addition to its wide application fields, the IRFP360 also has a simple and reliable working principle. Generally, the IRFP360 is a voltage-controlled device, which means that the gate-source voltage (VGS) can control the drain-source current (ID) through the device. The ID is the total current going through the device, and it is controlled by VGS. When VGS is high, the device will turn on, which means the ID is large and the device can deliver high power. Conversely, when VGS is low, the device will turn off and the current will be cut off, thus ensuring protection.

In conclusion, the IRFP360 is an advanced power MOSFET which is widely utilized in various industries. With excellent thermal and electrical performance, the device can be used in switching power supplies, motor drives, and power converters. In addition, the device has a simple and reliable working principle, which makes it suitable for most applications.

The specific data is subject to PDF, and the above content is for reference

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