Allicdata Part #: | IRFPS40N60K-ND |
Manufacturer Part#: |
IRFPS40N60K |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 40A SUPER247 |
More Detail: | N-Channel 600V 40A (Tc) 570W (Tc) Through Hole SUP... |
DataSheet: | IRFPS40N60K Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-274AA |
Supplier Device Package: | SUPER-247 (TO-274AA) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 570W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7970pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFPS40N60K is an N-channel enhancement mode silicon-gate Power MOSFET that is produced using Fairchild’s advanced PowerTrench® process. It features low gate-charge losses, fast switching speed and excellent output characteristics. Its high dV/dt capability offers increased reliability in switching applications.
The IRFPS40N60K is particularly suitable for use in various industrial applications due to its high efficiency, excellent performance, and advanced feature set. Its low output capacitance and low gate-charging losses are especially advantageous when using high frequency switching. The device also has low thermal resistance, making it ideal for thermal management applications.
The IRFPS40N60K is primarily used in various industrial applications such as motor control, DC-DC converters, switching mode power supplies and other power switching applications. It is also suitable for use in a variety of automotive applications such as alternator controllers, automotive HVAC controllers, and body controllers.
The IRFPS40N60K has three primary working principles. The first is its drain-to-source voltage, or VDS, which is responsible for the majority of the devices switching characteristics. As the voltage from the drain increases, the current through the device increases proportionately to produce a linear output. The second principle is its gate-to-source voltage, or VGS, which is responsible for turning the device on and off. When the voltage across the gate reaches a certain threshold, the device is turned on, allowing current to flow through the device. The third principle is its gate-charge, or Qg, which measures the amount of charge that has to be supplied to the gate before it can be properly turned on. The higher the gate-charge, the more power that is needed to switch the device.
In summary, the IRFPS40N60K is a versatile silicon-gate Power MOSFET that is suitable for a variety of industrial applications due to its high efficiency, excellent performance, and advanced features. It offers low gate-charge losses and fast switching speeds, making it an ideal choice for high frequency switching applications, as well as for use in automotive and industrial motor control applications. By understanding the device’s three primary working principles, users can successfully use the IRFPS40N60K in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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