IRFR010TRL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	200 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 25V
FET Feature:	--
Power Dissipation (Max):	25W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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IRF510 is a commonly used high-current low power MOSFET (metal–oxide–semiconductor field-effect transistor), manufactured by International Rectifier, which is now part of Infineon Technologies, for use in general purpose amplifier and switching circuits. Although designed for amplification and switching applications, the component also finds use in a wide range of power switching applications ranging from motor control to power conversion.The IRF510 MOSFET is available in plastic TO-220 and D2-pak power packages, making them suitable for a variety of different uses. It consists of a single N-channel, enhancement-mode MOSFET, operating in the enhancement mode, which requires a gate-source voltage in order to enable the device to switch. The device also has low ON resistance and fast switching times, making it suitable for use in medium to high-power applications.The IRF510 features an Drain-Source voltage rating of 55V and a current handling capability of up to 10 amps, making it ideal for use in a wide range of switching and amplifier applications. It has a maximum continuous drain current of 10A and a maximum power of 140W. Furthermore, it also has a high transition frequency of 0.8Ω/0.2Ω for 5V.In terms of applications and working principle, IRF510 is used in a variety of different applications requiring medium to high power and short switching times. These applications could range from power supplies, motor control, and RF power amplifiers. In terms of working principle, the device is operated in an enhancement mode, meaning that it needs to be triggered by a gate-source voltage before it will allow current to flow through the channel. Once this voltage level is reached, the current starts to flow and allows the device to work as an amplifier or a switch.Aside from the above mentioned applications and working principle, the IRF510 is also widely used in a range of other circuits. For example, it can be used to control the speed of DC motors, regulate the power of embedded systems, and provide linear control for AC and DC converters. In addition, the fast switching times and enhanced current ratings of the IRF510 also make it suitable for use in switching power supplies and RF applications.Finally, the device also offers a significant amount of protection against ESD and temperature changes. The ESD protection is provided by the presence of an ESD diode, which is placed between the gate and source terminals of the device. This protection helps to prevent the device from being destroyed by electrostatic discharge, ensuring that it remains in a safe state when used in high-speed applications. In addition, the device also has a built-in temperature sensor which helps it to protect itself against thermal runaway, further boosting its reliability and performance.Overall, the IRF510 is a commonly used, reliable and robust MOSFET which can be used in a wide variety of applications requiring medium to high power switching or amplification. It is well-suited for use in applications involving power conversion, motor control, and RF power amplification, as well as a range of other circuits. The device provides robust protection against ESD and thermal runaway, as well as fast switching times and enhanced current ratings. As a result, the IRF510 is an ideal choice of MOSFET for a variety of applications.

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