IRFR110

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	180pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	540 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRF110 is a high voltage HexFET power MOSFET which has become the driving force of many high-power applications including switched-mode power supplies, DC-DC converters and motor drives. This versatile power electronic device features low gate charge and low on-state resistance, making it an ideal choice for various power switching applications. In this article, we will take a closer look at how IRF110 works and its applications.

Working Principle

The basic working principle of IRF110 is similar to that of common MOSFETs. It consists of a source, gate and drain, with the source being the common terminal. Voltage applied to the gate controls the flow of current between the source and the drain. When positive gate voltage is applied, it turns on the MOSFET and current flows between the source and drain. When the gate voltage is removed, the MOSFET turns off and no current passes through it.IRF110 also has some unique structures which give it advantages over other types of MOSFETs. Its gate is insulated from the channel by an oxide layer, which improves the device’s switching performance by eliminating the need for a capacitance load. This helps to reduce the power losses associated with more typical MOSFETs. IRF110 also features higher breakdown voltages and low on-state resistance, making it suitable for use in high voltage applications.

Applications

IRF110 is a versatile MOSFET that can be used in a wide range of power switching applications. It is commonly used in switched-mode power supplies and DC-DC converters due to its low gate charge and low on-state resistance. It is also commonly used in motor drives, as its high breakdown voltage makes it suitable for these high-power applications.In addition, the unique design of IRF110 makes it well suited for high-frequency switching, as it allows for faster switching times. This allows it to be used in LED lighting, audio amplifiers, and other high-frequency applications that require a relatively fast switching speed.IRF110 is also commonly used in solar and renewable energy applications, as it offers high efficiency and low power losses. It is an ideal choice for solar panels and inverters due to its low gate charge and low on-state resistance, which reduces the amount of energy needed to operate the device.

Conclusion

IRF110 is a high voltage HexFET power MOSFET which has become the driving force of many high-power applications. Its low gate charge and low on-state resistance make it an ideal choice for various power switching applications, such as switched-mode power supplies, DC-DC converters, motor drives, and LED lighting. The high breakdown voltage also makes it suitable for high voltage applications, as well as for solar and renewable energy applications.

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