
Allicdata Part #: | IRFR13N15DTRPBF-ND |
Manufacturer Part#: |
IRFR13N15DTRPBF |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 14A DPAK |
More Detail: | N-Channel 150V 14A (Tc) 86W (Tc) Surface Mount D-P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.39000 |
10 +: | $ 0.37830 |
100 +: | $ 0.37050 |
1000 +: | $ 0.36270 |
10000 +: | $ 0.35100 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 86W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 8.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFR13N15DTRPBF is a type of single, monolithic, Enhancement-Mode, N-channel field effect transistor (FET) created with the latest and most advanced semiconductor technology. As one of the most popular FETs in the market, it features multiple features that make it suitable for many applications. To better understand this device, this article will discuss the IRFR13N15DTRPBF application field and its working principle in more detail.
Applications of IRFR13N15DTRPBF
The IRFR13N15DTRPBF is highly versatile, as it is designed to be used in many different types of applications. It is often used in audio, video, and power amplification. It can also be used in voltage regulators, power supplies, speed controllers and switching circuits.
The IRFR13N15DTRPBF is also commonly used in power switching applications, such as motor drives, DC-DC converters and UPSs. This FET is also suitable for use in piezoelectric devices, in which it can amplify and regulate audio and video signals. Finally, it can be used in consumer electronics, such as DVD players and mobile phones.
Working principle of IRFR13N15DTRPBF
The working principle of the IRFR13N15DTRPBF is based on the electrical properties of both P-type and N-type semiconductors. By applying a voltage between the gate and the source, N-type carriers move to the surface of the semiconductor, forming an “inversion layer”. This inversion layer provides a path for current to flow from the source to the drain. By varying the voltage level, the flow of current can be controlled.
The IRFR13N15DTRPBF offers higher efficiency than bipolar junction transistor (BJT) designs. This is because FETs require less energy to drive their gate than BJT designs. Additionally, the IRFR13N15DTRPBF is capable of handling higher voltages and currents than BJT designs. Thus, FETs are typically more suitable for high-power applications.
Conclusion
The IRFR13N15DTRPBF is a versatile FET that can be used in many different types of applications. It is highly efficient, and offers better performance than traditional BJT designs. As such, it is commonly used in power switching applications, audio and video amplifiers, voltage controllers, motor drives and more. By understanding the IRFR13N15DTRPBF application field and working principle, engineers and hobbyists can better understand how they can use this device in their projects.
The specific data is subject to PDF, and the above content is for reference
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