| Allicdata Part #: | IRFR5505GTRPBFTR-ND |
| Manufacturer Part#: |
IRFR5505GTRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 55V 18A DPAK |
| More Detail: | P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pa... |
| DataSheet: | IRFR5505GTRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 57W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 9.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IRFR5505GTRPBF is a N-channel enhancement mode MOSFET, manufactured by International Rectifier. It is designed to deliver ultra-low on-resistance performance while remaining cost-effective.
IRFR5505GTRPBF is an ideal choice for a wide range of applications requiring low on-resistance, fast switching speeds, and low gate charge. It is highly suitable for load switching and power management in power supplies, DC-DC converters, communication systems, motor drive circuits, and other high-frequency switching applications.
Application fields
- Power supplies
- DC-DC converters
- Communication systems
- Motor drive circuits
- High-frequency switching circuits
Features
- Low on-resistance
- Fast switching speeds
- Low gate charge
- High-current rating
- Low threshold drive
Working Principle
IRFR5505GTRPBF is an N-channel enhancement mode MOSFET, which means it does not require a positive gate-to-source voltage to operate. To turn on the device, the gate must be pulled negative with respect to the source, increasing the gate-to-source voltage and allowing electrons to flow from the source to the drain.
At low gate-to-source voltages, the IRFR5505GTRPBF can operate as a low-voltage logic switch. As the gate voltage is increased, the device conducts more current and can be used to switch higher loads. This feature makes the IRFR5505GTRPBF ideal for applications such as load switching and power management.
IRFR5505GTRPBF is also designed with a low gate-threshold voltage, which means it requires less gate voltage to drive the device on. This makes the device well-suited for high-frequency switching applications, where fast switching speed is required.
The device also features a low on-resistance, allowing more current to be delivered when the device is in its on state. This makes the device ideal for applications requiring high-current handling capabilities, such as motor drive circuits and power supplies.
The specific data is subject to PDF, and the above content is for reference
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IRFR5505GTRPBF Datasheet/PDF