| Allicdata Part #: | IRFR9210PBF-ND |
| Manufacturer Part#: |
IRFR9210PBF |
| Price: | $ 0.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 200V 1.9A DPAK |
| More Detail: | P-Channel 200V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
| DataSheet: | IRFR9210PBF Datasheet/PDF |
| Quantity: | 1378 |
| 1 +: | $ 0.85000 |
| 10 +: | $ 0.82450 |
| 100 +: | $ 0.80750 |
| 1000 +: | $ 0.79050 |
| 10000 +: | $ 0.76500 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.9nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.9A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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Introduction
The IRFR9210PBF is an advanced, low-voltage, enhancement-mode, Field Effect Transistor (FET) used in a variety of applications. This P-Channel FET is manufactured using the latest Trench MOSFET technology for improved device performance. The device is ideal for use in power management, power supply, and voltage regulation circuits.
Application Field
The IRFR9210PBF is suitable for applications such as DC-DC converters, DC-AC inverters, LED and lighting control, battery management, power conditioning, high-side switches, power-OK circuits, and automotive applications. It is also well-suited for power supply design, as it presents a low on-resistance and low-gate threshold voltage. Furthermore, it is also suitable for high-speed switching applications, where it provides high switching speeds, low gate charge, and high transconductance. Additionally, the IRFR9210PBF is also suitable for high-current power switching operations, where it provides improved power dissipation, high current density, and low thermal resistance.
Working Principle
The IRFR9210PBF is an enhancement-mode FET, which means that it is normally off and no current flows when the gate is at 0V. When a positive voltage is applied to the gate, the device begins to conduct. The drain current is then determined by the gate voltage and the resistance between the source and drain. The unusual size and shape of the FET\'s gate structure allows it to operate at low-voltages and have improved switching speeds, low gate charge, and high transconductance.
The IRFR9210PBF also features a low gate-to-drain charge for improved performance. This gate-to-drain charge is created by the construction of the FET drain and its underlying gate structure. The gate is diode-connected to the drain, allowing it to absorb some of the gate-to-drain charge and reduce the amount of charge required to turn the device on.
Conclusion
The IRFR9210PBF is an advanced, low-voltage, enhancement-mode FET used in a variety of applications. It is suitable for applications such as DC-DC converters, DC-AC inverters, LED and lighting control, battery management, power conditioning, high-side switches, power-OK circuits, and automotive applications. The IRFR9210PBF is an enhancement-mode FET, which means that it is normally off and no current flows when the gate is at 0V. When a positive voltage is applied to the gate, the device begins to conduct. Its unique gate structure also allows it to operate at low-voltage and have improved switching speeds, low gate charge, and high transconductance.
The specific data is subject to PDF, and the above content is for reference
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IRFR9210PBF Datasheet/PDF