IRFS59N10DTRLP

Vgs(th) (Max) @ Id:	5.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2450pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	114nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	25 mOhm @ 35.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	59A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRFS59N10DTRLP is a power MOSFET transistor widely used in high-side switch applications. It is a Single N-Channel MOSFET that has a high input impedance, low on-state resistance and a low gate threshold voltage, making it suitable for a wide variety of applications, including switching circuits, motor control and power management.IRFS59N10DTRLP has a maximum drain-source voltage of 40V and a drain current of 10A, making it suitable for power levels up to 400W. The device has a maximum on-state resistance of 0.024Ω, making it suitable for high-efficiency power switches and minimizing power loss when compared to other technologies. The device is designed with a gate-source voltage range of -20V to +20V. The low gate threshold voltage of 2.5V makes it suitable for applications such as on-off control, load-dump protection, power sequencing and hot-swap applications.It is packaged in a TO-252 surface-mount package, making it suitable for compact PCB designs. It is also available in a D²PAK surface-mount package, allowing for easier assembly and better heat dissipation.This device is also capable of blocking high-voltage spikes and preventing interferences, making it suitable for use in telecommunication, consumer electronics and automotive applications. Its high noise immunity also makes it suitable for applications such as power amplifiers and power converters.Furthermore, this device has built-in ESD protection and electro-magnetic interference (EMI) protection, making it suitable for use in sensitive applications.The device also features fast switching capability and a large input capacitance can also be easily tuned for applications such as power converters and AC/DC power supplies.The IRFS59N10DTRLP is a power MOSFET transistor that is suitable for a wide range of applications, thanks to its high input impedance, low on-state resistance, low gate threshold voltage, fast switching capability and high noise immunity. Its built-in ESD protection and EMI protection make it suitable for use in sensitive applications, and its high drain-source voltage and drain current make it suitable for power levels up to 400W. The device is also packaged in a TO-252 surface-mount package and a D²PAK surface-mount package, making it highly suitable for compact PCB designs and easier assembly. Finally, its large input capacitance can be easily tuned for applications such as power converters and AC/DC power supplies.

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