IRFSL23N15D

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The IRFSL23N15D is a type of N-channel enhancement mode field-effect transistor (FET). It is one of a many product offerings from International Rectifier and is most commonly used in automotive, consumer and industrial applications. Many users appreciate the low performing device costs and its overall performance record and it is also useful in discrete and IC applications.

Specifically, the IRFSL23N15D has several design features that allows it to perform in a reliable manner and handle larger currents or voltages. First, it has a reverse standoff voltage of 15V, meaning that it can function with any voltage up to this level without harming the device. Second, its maximum drain to source voltage (Vds) is 23V and its maximum drain current (Id) is 10A. Finally, it also has an on-state resistance (Rdson) of 0.020 Ω.

In addition to its design features, the IRFSL23N15D also has a unique operating principle. This device functions by allowing current to flow through its source-drain channels, which are partially formed on the silicon substrate. When a voltage is applied to the gate electrode, the electric field created by the charged particles attracts mobile electrons, thereby allowing the current to flow freely through the source-drain channels. This is known as the channel modulation and is essentially the process by which the transistor works to either allow or restrict current flow.

The IRFSL23N15D is also suitable for applications such as DC to DC converters, power management circuits, automotive electronics, computer power supplies and other power switching applications. It has a maximum operating junction temperature of 150 degrees Celsius, making it ideal for high temperature environments. It also has an integrated Schottky diode between the drain and the source, providing protection from reverse discharge.

The IRFSL23N15D is an important choice for anyone whose project calls for an N-channel enhancement mode FET. By utilizing its design features and operating principle, users can make a device that is both powerful and reliable. With its high performing device costs, maximum operating junction temperature and reverse discharge protection, it is sure to be an attractive choice for those applications requiring a higher current or voltage capability than other transistors can offer.

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