| Allicdata Part #: | IRFSL4020PBF-ND |
| Manufacturer Part#: |
IRFSL4020PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 200V 18A TO262 |
| More Detail: | N-Channel 200V 18A (Tc) 100W (Tc) Through Hole TO-... |
| DataSheet: | IRFSL4020PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.9V @ 100µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFSL4020PBF is a large area, field effect transistor (FET) designed for applications in high power, high speed switching and amplifying situations. It is a type of single MOSFET that utilizes voltage control to amplify a signal by controlling its current output. This device is commonly used for amp and power switching in consumer electronic products, audio systems, security systems, industrial control, and telecommunications systems.
The IRFSL4020PBF has a very low threshold voltage and a maximum operating temperature of 150°C. It is constructed using an N-channel junction that is capable of conducting up to 29A of current. The device features a maximum drain-to-source voltage of 200V, a maximum permissible power dissipation of 75W, and an RDS(on) value of 0.028Ω. The device has extremely low gate charge and a gate-to-source voltage range of 10V to 20V.
The IRFSL4020PBF works on the principle of power MOSFET or FET operation. Basically, this device consists of a source and a drain, separated by P-Channel and N-Channel regions. A gate is placed between the source and drain, which closes the path and allows current to flow when it is biased positively. The positive charge on the gate allows current to flow from the source to the drain, thus enabling current gain. The IRFSL4020 is designed so that it can provide high speed, bi-directional current control for applications such as audio amplifiers, shunt regulators, switching regulators, and battery-powered circuits.
The IRFSL4020PBF has numerous applications in consumer electronics, telecommunications, and industrial control systems. Its low threshold voltage and high operating temperature enable it to be used in high power and high speed switching applications. It can also be used in power amplifier circuits, switching regulators, and power supply designs. Its low gate charge makes it easier to switch quickly, making it ideal for applications that require fast switching. It is also suitable for automotive applications, since it has a high temperature operating range.
The IRFSL4020PBF is a valuable addition to any project requiring high speed, tight control of current. Its capability to provide fast switching and low power dissipation ensures that it will be an invaluable asset to numerous industrial, consumer, and educational applications. With its high temperature durability, reliability, and low gate charge, the IRFSL4020PBF provides a great cost-to-benefit ratio that can be relied upon for years to come.
The specific data is subject to PDF, and the above content is for reference
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IRFSL4020PBF Datasheet/PDF