| Allicdata Part #: | IRFSL4321PBF-ND |
| Manufacturer Part#: |
IRFSL4321PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 83A TO-262 |
| More Detail: | N-Channel 150V 85A (Tc) 350W (Tc) Through Hole TO-... |
| DataSheet: | IRFSL4321PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 350W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4460pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 33A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFSL4321PBF is an N-channel power field effect transistor (FET) designed specifically for use in applications that are sensitive to switching behavior, requiring advanced level of performance. It is designed to minimize power dissipation while providing excellent thermal transfer from the die to the mounting board. The IRFSL4321PBF is manufactured using advanced Si-Ge technology which ensures the highest levels of performance and reliability.
General Features of IRFSL4321PBF
- 20V drain source voltage
- 10A drain current
- 175mW/ºC, maximum power dissipation
- 4.3A thermal impedance
- High-speed switching
- Easy to integrate into circuits
- Low input capacitance
- High frequency operation
The IRFSL4321PBF is a single N-Channel power field effect transistor specifically designed for Switch Mode Power Supplies (SMPS). The FET can function as either a switch or a synchronous rectifier to regulate power in the circuit. It is designed to have low input capacitance, high frequency operation, fast switching, and easy integration into existing circuitry. As such, the IRFSL4321PBF is ideal for designing circuits that are sensitive to switching behavior and need an advanced level of performance.
Working Principle of IRFSL4321PBF
A field effect transistor (FET) is a semiconductor device that relies on the electric field created by an applied voltage to control current flow between source and drain terminals. The IRFSL4321PBF is a single N-channel MOSFET, meaning it utilizes a gate to control current flow. A MOSFET is usually constructed with a grid of metal oxide (silicon dioxide, for example) that sits between the source and drain. This grid is called a gate and when voltage is applied to the gate, current will flow between the source and drain and be controlled by the voltage applied to the gate. The amount of current and switching speed can be adjusted by manipulating the parameters of the DC voltage, such as frequency and amplitude.
The IRFSL4321PBF is an N-channel MOSFET, meaning the transistor is activated by a voltage at the gate, and the positive voltage at the gate will attract electrons from the polarized N-type gate material, which then leave holes in the P-type material of the source and drain. This will create a charge across the drain region, allowing current to flow. When the gate voltage of the IRFSL4321PBF is low, the source-drain electrical current paths are blocked, preventing current to flow. In this way, the FET is able to control current.
The IRFSL4321PBF is designed to be used in applications that require an advanced level of switching behavior and performance. It is capable of fast switching speeds at high frequencies, and its low input capacitance allows for more efficient operation and less power dissipation. The FET also features high thermal transfer from the die to the mounting board, which reduces heat buildup in the circuit and improves overall circuit performance. Additionally, its small size and easy integration make it an ideal choice for high-frequency circuits.
Application of IRFSL4321PBF
The IRFSL4321PBF is a single N-channel MOSFET that is designed for circuits requiring high levels of performance and switching behavior. As such, it is commonly used in switching applications such as Switch Mode Power Supplies (SMPS) and PWM controllers. It can also be used to design circuits that require fast switching speeds, high frequency operation, and low power dissipation. Additionally, its small size and easy integration make it suitable for applications that are space-constrained.
The IRFSL4321PBF is also commonly used in the automotive industry. Its high thermal transfer, high frequency operation, and fast switching speed make it ideal for a variety of automotive applications, such as Body Control Modules (BCMs) and Engine Control Modules (ECMs). Additionally, its low input capacitance and small size make it perfect for engine cooling fan controls and other space-constrained devices. It is also popular for use in AC/DC and DC/DC converters.
Conclusion
The IRFSL4321PBF is a single N-channel MOSFET specifically designed for sensitive switching applications that require advanced levels of performance. The FET features low input capacitance, high frequency operation, fast switching speeds, and easy integration into existing circuitry. Additionally, it features excellent thermal transfer from the die to the mounting board, making it suitable for applications that are space-constrained. The IRFSL4321PBF is used in a variety of applications, including Switch Mode Power Supplies, PWM controllers, automotive controllers, and AC/DC and DC/DC converters.
The specific data is subject to PDF, and the above content is for reference
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IRFSL4321PBF Datasheet/PDF