IRFU014PBF Allicdata Electronics
Allicdata Part #:

IRFU014PBF-ND

Manufacturer Part#:

IRFU014PBF

Price: $ 1.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 7.7A I-PAK
More Detail: N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Throug...
DataSheet: IRFU014PBF datasheetIRFU014PBF Datasheet/PDF
Quantity: 848
1 +: $ 1.05000
10 +: $ 1.01850
100 +: $ 0.99750
1000 +: $ 0.97650
10000 +: $ 0.94500
Stock 848Can Ship Immediately
$ 1.05
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFU014PBF is a Field Effect Transistor (FET) specifically designed for use in applications such as analog switching, audio amplifiers, and DC motor control circuits. It is a versatile device that is suitable for a wide range of applications and operates over a wide voltage range. This FET is available in a single universal package and is highly efficient, with a low resistance between drain and source and low input capacitance.

The IRFU014PBF FET has an insulated-gate field effect structure (IGFET) comprised of three terminals, a source, a gate, and a drain. The source is the entry point for current flow, the gate is the control terminal for current flow and voltage, and the drain is the output of current flow. This structure allows the FET to achieve gains much more efficiently than regular MOSFETs. The IRFU014PBF FET is also able to handle much higher levels of power than conventional p-channel FETs, with a rating of up to 4.5 volts.

The IGFET structure of this device, as well as the fact that it uses a low voltage, makes it ideal for low-noise analog circuits. Additionally, the IRFU014PBF FET is designed to conduct a larger portion of the signal current through its wires. This helps decrease noise, making it ideal for applications such as audio amplifiers. The IRFU014PBF also offers significant power savings over traditional designs, as it requires less voltage to switch, meaning less power is required for the same task. Furthermore, the IRFU014PBF FET has an excellent performance-to-cost ratio and is one of the most cost effective solutions available.

The working principle of the IRFU014PBF FET is based on the gate-source voltage, or the voltage difference between the gate and source terminals. The voltage difference between the source and gate controls the current between the drain and source. When a voltage is applied to the gate terminal, this causes the source-drain connection to be formed, thus allowing current to flow through the device. If a negative voltage is applied to the gate terminal, the source-drain connection is cut off and no current flow is allowed.

The IRFU014PBF FET is a versatile solution for a variety of applications. It can be used in many different circuits, including audio amplifiers, analog switching applications, DC motor control, and even in power supply designs. Additionally, it is highly efficient and has a low input capacitance. This makes it ideal for low-voltage and high-efficiency solutions in many applications.

The IRFU014PBF FET is a single package universal FET that offers outstanding power efficiency and performance for applications such as analog switching, audio amplifiers, and DC motor control circuits. The FET utilizes an insulated-gate field effect structure and its source-drain connection is controlled by a voltage difference between its gate and source terminals. This device is highly efficient and is able to handle large currents while still operating at low voltages. The IRFU014PBF is an ideal solution for many applications due to its flexibility and its excellent cost-performance ratio.

The specific data is subject to PDF, and the above content is for reference

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