Allicdata Part #: | IRFU310-ND |
Manufacturer Part#: |
IRFU310 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 1.7A I-PAK |
More Detail: | N-Channel 400V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Throu... |
DataSheet: | IRFU310 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRFU310 is a part of a field-effect transistor (FET) family designed for low-voltage applications. It is a popular choice for digital and linear applications as it is both low-voltage and low-power. The IRFU310 offers high impedance on the drain side allowing for low noise, high gain and high input impedance when used in linear applications.
The IRFU310 is a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It belongs to the category of single-gate FETs. A single-gate FET is a type of transistor where the control element is a single gate electrode. This control element can be electrically charged or discharged to control the movement of electrical current between the source and the drain terminals. It is different from a bipolar junction transistor (BJT) where a single base-to-emitter junction controls the current flow.
The IRFU310 works by utilizing an external voltage applied to the gate to attract a depletion layer or “channel” between the source and drain. The channel allows electrons to be conducted through the FET depending on the potential of the gate. By varying the voltage of the gate, the charge of the channel can be completely depleted or completely full, allowing or preventing current through the FET.
The IRFU310 is typically used in applications that require low-power operation at low supply voltages. It is often used in power management applications such as voltage regulation, analog switching, DC-DC converters, low-voltage power MOSFETs, and power MOSFETs for automotive applications. It is also useful for energy saving, as well as driving of high capacitive loads. The IRFU310 is well-suited for low-power, low-voltage applications due to its combination of high input impedance, low gate capacitance, and low threshold voltage.
The IRFU310 is also ideal for digital switching applications due to its low “on” resistance, low threshold voltage and the ability to be driven with low voltage levels. It is well-suited for high-speed switching and switching applications in which very low power dissipation is required. This type of device is ideal for controlling the charge and discharge of capacitive loads. In summary, the IRFU310 is a low-voltage, low-power single-gate FET solution that is popular in digital and linear applications. It is suitable for power management applications such as voltage regulation and driving high capacitive loads. It also works well for digital switching applications that require low power and low voltage operation.
The specific data is subject to PDF, and the above content is for reference
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