IRFU9020PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFU9020PBF is a single N-Channel Enhancement Mode Field Effect Transistor (FET) designed for low level amplifier, line driver and stepper motor applications. The transistor is widely used in many electronic power supply options, including switching power supplies, converters, and inverters. It has a high-frequency, low-power rating with low-noise characteristics, making it ideal for applications requiring a low threshold voltage and high linearity.

The IRFU9020PBF transistors are built with enhanced mode transistors, which are used to control current flow in electronic circuits. When the gate is driven negative, it draws no current and behaves like an open switch. When the gate is driven positive, the transistor turns on and has a very low background leakage. This makes it an ideal device for power management applications.

The IRFU9020PBF transistor is based on a single N-Channel Field Effect Transistor design. It has an N-channel FET construction and is a low-power, high-frequency FET suitable for low voltage and medium current applications. Its low-voltage and low capacitance features make it ideal for use in switching power applications. The transistor has a breakdown voltage of -55 Volts and a maximum continuous drain current rating of 95mA.

The FET has an ambit of 90 to 300 mΩ, with an off-state drain-source breakdown voltage of -55 Volts and an on-state Drain-Source voltage of -2 V. This combination of characteristics makes it suitable for applications that require a constant current sensing, such as stepper motors, switch-mode power supplies, and audio amplifiers.

The transistor operates in enhancement mode which means it requires a gate bias voltage of -2V to achieve a high output level. The on-state drain current of the transistor is limited to 95mA, and the total gate capacitance is 3.4 pF. As the gate voltage increases, the drain current also increases. The transistor is characterized by low drain-source on-state resistance and high linearity, and it can handle frequencies up to 2 GHz.

The IRFU9020PBF transistors are available in an SOT-23 package, enabling easy mounting and handling for easy applications. The transistor is also RoHS compliant, making it suitable for both commercial and industrial applications. The lead finish on the device is also tin-plated, making it compatible with lead-free soldering processes.

In conclusion, the IRFU9020PBF is an ideal choice for applications that require low-voltage and low-current operations. It is RoHS compliant, providing a reliable solution for power management applications. Its enhanced mode gate construction makes it ideal for use in low-noise and low-power applications. Additionally, its low capacitance and on-state drain current rating make it suitable for use in applications that require a constant current sensing.

The specific data is subject to PDF, and the above content is for reference