IRG4PH40K Allicdata Electronics
Allicdata Part #:

IRG4PH40K-ND

Manufacturer Part#:

IRG4PH40K

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 30A 160W TO247AC
More Detail: IGBT 1200V 30A 160W Through Hole TO-247AC
DataSheet: IRG4PH40K datasheetIRG4PH40K Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Power - Max: 160W
Switching Energy: 730µJ (on), 1.66mJ (off)
Input Type: Standard
Gate Charge: 94nC
Td (on/off) @ 25°C: 30ns/200ns
Test Condition: 960V, 15A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

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The IRG4PH40K is an insulated-gate bipolar transistor (IGBT) that is part of a family of IGBTs known as the Trench IGBT4s. This device is designed for applications such as lighting, motor drive, home appliances and solar inverters, among others. It is an ideal solution for DC-AC, AC-DC and DC-DC power conversion.

The Trench IGBT4 family was designed to offer superior thermal performance, high efficiency and low switching losses. These features make it a popular choice for motor drives, home appliances, lighting and solar inverters. This device also offers easy gate drive and circuit protection.

The IRG4PH40K is a single IGBT, which means that it is a single-channel device. It has a collector-emitter voltage (Vce) of 600V and a maximum collector current (IC) of 40A. It also has a gate-emitter voltage (Vge) of 15V, which allows it to switch at a higher speed, making it suitable for high frequency applications.

The IRG4PH40K offers a high efficiency, low switching losses, low on-state resistance and a low leakage current. These features make it ideal for use in power conversion applications. In addition, the device offers integrated overcurrent and temperature protection, which ensures a longer lifetime and greater reliability.

The IRG4PH40K is designed for low-power applications. Its features include a low Vce(sat) and low gate charge, which make it a suitable option for low-power applications. Additionally, the device features a wide operating temperature range (-40°C to 150°C) and low gate drive power requirements, which make it suitable for use in a wide range of environments.

The IRG4PH40K is also available in different packages including TO-3PF, TO-220AB and TO-247, which makes it suitable for use in a wide range of applications. Furthermore, the device has a low switching noise and low thermal resistance, which make it suitable for use in high-speed applications.

The working principle of the IRG4PH40K is based on the principle of a transistor. Transistors are semiconductor devices that are used to control the flow of current between two terminals. In the case of the IRG4PH40K, the gate is connected to the source and the collector is connected to the drain. When a voltage is applied to the gate, it changes the conductivity of the device, allowing current to flow through the transistor. This current is then amplified according to the gain of the device, which is determined by the ratio of the collector current to the gate current.

In conclusion, the IRG4PH40K is a single IGBT device that is designed for applications such as lighting, motor drive and solar inverters, among others. It offers superior thermal performance, high efficiency and low switching losses. Additionally, it features a wide operating temperature range, low on-state resistance and low gate drive power requirements. It is available in different packages and has a wide range of applications due to its low switching noise and low thermal resistance. Lastly, its working principle is based on the principle of a transistor.

The specific data is subject to PDF, and the above content is for reference

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