IRG6IC30U-110P Allicdata Electronics
Allicdata Part #:

IRG6IC30U-110P-ND

Manufacturer Part#:

IRG6IC30U-110P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 330V 28A 43W TO220ABFP
More Detail: IGBT Trench 330V 28A 43W Through Hole TO-220AB Ful...
DataSheet: IRG6IC30U-110P datasheetIRG6IC30U-110P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 330V
Current - Collector (Ic) (Max): 28A
Vce(on) (Max) @ Vge, Ic: 2.38V @ 15V, 120A
Power - Max: 43W
Switching Energy: --
Input Type: Standard
Td (on/off) @ 25°C: --
Test Condition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak
Description

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The IRG6IC30U-110P is a single IGBT device designed for general purpose power switching applications. It features an improved low-saturation voltage and an increased current drive capability. This makes the device suitable for high power switching applications, such as electric vehicles and solar inverters.

The device consists of two parts, an insulated-gate bipolar transistor (IGBT) as the main switching element, and a diode connected in parallel with the IGBT to conduct the reverse current when the switch is open. This dual element design provides a high degree of switching performance.

The IGBT\'s working principle is based on the concept of electric field control. A voltage is applied across the terminals of the transistor, causing a flow of electric current. As the voltage is increased, the electric field within the transistor increases and enables a greater current to flow. The voltage across the E-gate determines the amount of current flow. This property makes the IGBT an ideal device for power switching applications.

The IRG6IC30U-110P is designed to **cope with high power applications, as it has a blocking voltage of 1,100V and a continuous current rating of 30A. The low saturation voltage (Vce(sat)) of 2.6V allows for a more efficient switching operation, as the current losses are reduced, resulting in less heat generation. The device also operates with a low EOFF current, meaning that it will not cause noise and interference to any neighbouring electronic components.

This device has a typical switching frequency of 15kHz, meaning it can be used in applications where high-speed switching is needed. It also has a low gate charge, which limits the amount of energy required for switching. The low capacitance of the device enables it to handle high frequency signals without creating interference and noise.

The IRG6IC30U-110P has an improved temperature range, making it suitable for use in harsh environments with temperatures ranging from -50°C to +150°C. This makes it an ideal choice in applications where high temperature operation and prolonged life are necessary.

The IRG6IC30U-110P is a single IGBT device designed for high-power switching applications, such as electric vehicles, solar inverters, and other industrial applications. It combines a low saturation voltage and high current drive capability to provide improved switching performance, low EOFF current, low gate charge, and high temperature range, making it suitable for a variety of demanding applications.

The specific data is subject to PDF, and the above content is for reference

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