IRG7CH75UED-R Allicdata Electronics
Allicdata Part #:

IRG7CH75UED-R-ND

Manufacturer Part#:

IRG7CH75UED-R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V ULTRA FAST DIE
More Detail: IGBT
DataSheet: IRG7CH75UED-R datasheetIRG7CH75UED-R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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The IRG7CH75UED-R is a type of insulated gate bipolar transistor (IGBT) made by International Rectifier, which is designed for high-voltage applications such as solar inverters, uninterruptible power supplies, and motion control. The device features a maximum collector-emitter voltage of 750V, a collector current of 75A and a turn-on time of 35ns. This popular device is used in many power electronic applications, and its characteristics make it suitable for many applications. In this article, we’ll take a look at the applications and working principles of the IRG7CH75UED-R IGBT.

The IRG7CH75UED-R is a single IGBT that is used in many power electronic applications due to its high voltage rating and low on-state resistance. It is frequently used in solar inverters as it can accommodate high-voltage solar panels and deliver the power needed to operate the inverter. It is also widely used in motor control applications due to its fast switching speed and good commutation performance. The device can also be used in uninterruptible power supplies (UPSs) to provide temporary power during power outages.

The device features a trench-gate structure and a reverse-parallel p-n diode, allowing it to switch faster and provide protection against short circuits. The gate driver circuit of the IGBT is designed to be compatible with 5V logic systems, while the gate voltage can be up to 20V. This allows the device to be controlled efficiently with low-voltage logic devices.

The working principle of the IRG7CH75UED-R IGBT can be simplified as a PNP transistor, where the base-emitter junction is replaced with the gate. When the gate is given a positive voltage, it attracts the electrons in the base and forms a conducting channel between the collector and the emitter, allowing current to flow. This enables the device to switch very quickly, allowing for fast commutations.

The IRG7CH75UED-R device is typically used for high power applications, where high voltage and fast switching speeds are needed. Its high voltage and low on-state resistance make it an ideal choice for applications such as solar inverters, uninterruptible power supplies, motor control, and other high-power applications. The device is also suitable for high-frequency applications due to its fast switching speed and low switching losses.

Overall, the IRG7CH75UED-R IGBT is a versatile and reliable device that has a wide range of applications. Its features make it suitable for many high-voltage and high-power applications, and its fast switching speed is ideal for high-frequency applications. With its ability to withstand high voltages and its reliable protection against short circuits, the IRG7CH75UED-R is an excellent choice for many power electronic applications.

The specific data is subject to PDF, and the above content is for reference

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