IRGP4620D-EPBF Allicdata Electronics
Allicdata Part #:

IRGP4620D-EPBF-ND

Manufacturer Part#:

IRGP4620D-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 32A 140W TO247AD
More Detail: IGBT 600V 32A 140W Through Hole TO-247AD
DataSheet: IRGP4620D-EPBF datasheetIRGP4620D-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 75µJ (on), 225µJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 68ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Td (on/off) @ 25°C: 31ns/83ns
Gate Charge: 25nC
Input Type: Standard
Series: --
Power - Max: 140W
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Current - Collector Pulsed (Icm): 36A
Current - Collector (Ic) (Max): 32A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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Integrated Gate-commutated Thyristors have revolutionized the power semiconductor industry. With its high current density, superior energy efficiency, and fast switching speed, the IGBT is quickly replacing the bipolar junction transistor. The IRGP4620D-EPBF is a popular IGBT device that is used in many industries. This article will discuss the application field and working principles of the IRGP4620D-EPBF.

Application Field of the IRGP4620D-EPBF

The IRGP4620D-EPBF is used in a variety of industrial applications, including motor control, power factor correction, and renewable energy generation. In motor control applications, the device is used to control the speed and torque of an electric motor. It can also be used to improve the power factor of a system, allowing it to operate more efficiently. Additionally, it is commonly used in the generation of clean, renewable energy from sources such as solar, wind, or hydroelectric power.

Working Principles of the IRGP4620D-EPBF

The IRGP4620D-EPBF is an integrated gate-commutated thyristor. This device combines the advantages of both a bipolar junction transistor (BJT) and an insulated gate bipolar transistor (IGBT). It contains both an n-channel BJT and an insulated gate field-effect transistor (IGFET). These two components are connected in series and can be used to control the flow of current. The device\'s input voltage is controlled by the gate voltage, allowing it to be used in high-power applications.

The device operates by allowing the flow of current to be switched on and off using the gate voltage. When the gate voltage is at a low level, the BJT is turned off, blocking current flow. However, when the gate voltage is increased, the BJT allows the current to flow, switching the device into a "saturated" state. The device also incorporates protective diodes, which help to protect the device from over-voltage and over-current conditions.

The IRGP4620D-EPBF is a highly efficient device, capable of operating at high speeds and temperatures. It is an ideal choice for motor control and power factor correction applications. Additionally, its high current density makes it suitable for use in renewable energy generation applications.

Conclusion

The IRGP4620D-EPBF is a versatile power device that can be used in a variety of applications. Its high current density and fast switching characteristics make it ideal for use in motor control, power factor correction, and renewable energy generation. Additionally, its protective diodes help to protect the device from over-voltage and over-current conditions. With its excellent performance and feature set, the IRGP4620D-EPBF is sure to be a popular choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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