IRLBL1304

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The IRLBL1304 is a single N-channel HEXFET power MOSFET from the IRLB Series. It is designed for easy-to-use, low noise, and low drain-source ON-resistance. This state-of-the-art MOSFET technology has been optimized for protective circuits, motor control, and lighting control applications.

This MOSFET has a higher drain-source breakdown voltage (Vdss ) due to its larger die area construction. The IRLBL1304 also has a higher avalanche energy rating, making it suitable for high-voltage operations up to 550V. It also has a higher saturation voltage and excellent low-gate charge leakage current.

The IRLBL1304 is designed primarily for power MOSFET applications. Its wide drain-source voltage range, high drain-source breakdown voltage and low gate threshold voltage make it ideal for operation in amplifiers, power supplies, or any other high-performance application. The IRLBL1304 is also suitable for use in digital circuit design, particularly in applications requiring high-speed switching or low-noise operations.

An important feature of the IRLBL1304 is its high power density, making it suitable for use in space-restricted applications. Its low gate-to-drain capacitance and low gate-to-source capacitance reduce switching time and reduce switching losses. Additionally, with its higher operating temperature range, up to 175°C, it is suitable for use in systems operating at higher power levels.

The IRLBL1304 can be used in a variety of applications due to its flexibility, stability, low thermal resistance, and excellent current handling capabilities. Its low gate threshold voltage and high drain-source breakdown voltage also make it ideal for protection circuits, motor control, and lighting control applications.

The working principle of the IRLBL1304 is simple. When a voltage is applied to the gate, it attracts charge carriers (electrons) from the source terminal to the drain. This generates a type of electric field between the source and the drain, allowing electrons to flow from source to drain. This electric field can be controlled by varying the voltage applied to the gate terminal. As the electric field strength increases, the drain-source current also increases.

In summary, the IRLBL1304 is a single N-channel HEXFET power MOSFET designed primarily for power MOSFET applications. This MOSFET has an additional advantage of having a higher drain-source breakdown voltage and excellent low-gate charge leakage current. Its wide drain-source voltage range, high drain-source breakdown voltage, and low gate threshold voltage make it ideal for operation in amplifiers, power supplies, or other high-performance applications. Additionally, the IRLBL1304 has a lower temperature operating range and high power density making it suitable for various applications. The working principle is based on the gate voltage, which controls the electric field between the source and the drain and, in turn, the flow of electrons.

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