IRLR3715ZTRRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRLR3715ZTRRPBF is a N-Channel field effect transistor (FET) used as a switch in numerous applications. This article will discuss the application fields and working principles of the IRLR3715ZTRRPBF.

The IRLR3715ZTRRPBF is a single N-Channel MOSFET utilizing the company\'s TrenchFET power MOSFET technology. It provides performance and improved manufacturability. This FET is capable of handling currents up to 71A and voltages up to 60V. It features a RDS(on) of 37mΩ and a breakdown voltage of 175V. The IRLR3715ZTRRPBF also has an operating temperature range between –55°C to +175°C.

This FET is typically used in a variety of applications and industries including automotive, consumer electronics, power conversion, industrial, and other applications where a reliable switching device is required. It is ideal for use in general-purpose switch mode power supply, battery chargers, motor control, and DC-DC converters. It can also be used in power supply relays, high-side switches, load switches, and RF switches.

The IRLR3715ZTRRPBF works by utilizing the four terminals, the drain, source, gate, and body, to control the current and voltage in an electronic device or circuit. The voltage difference between the drain and source dictates whether current flows therein. If the voltage between the drain and source is negative, no current flows. If, however, the voltage is positive, current will flow. The magnitude of the voltage between these two points determines the amount of current that can flow.

The number of electrons and current is controlled by the gate. When a positive voltage is applied to the gate, electrons will be drawn to the gate through the oxide layer. The presence of these electrons creates a channel, enabling the current to flow freely between the drain and the source. Conversely, when a negative voltage is applied to the gate, the electrons are repelled, resulting in a closed channel and no current flow. This process is known as "channel modulation".

The IRLR3715ZTRRPBF is capable of handling large amounts of power while consuming very little power itself. The low internal gate resistance also makes this FET ideal for use in high-frequency applications. The excellent thermal performance of this FET further ensures that it can handle large amounts of power without overheating.

The IRLR3715ZTRRPBF is a versatile and reliable N-Channel MOSFET, suitable for use in a variety of applications. It can handle currents up to 71A and voltages up to 60V. The four terminals allow for precise control of the current and voltage, enabling it to be used for switching or power conversion applications. The excellent thermal characteristics and low gate resistance also make this FET ideal for high-frequency applications.

The specific data is subject to PDF, and the above content is for reference