Allicdata Part #: | IRLR8259TRPBFTR-ND |
Manufacturer Part#: |
IRLR8259TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 57A DPAK |
More Detail: | N-Channel 25V 57A (Tc) 48W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR8259TRPBF Datasheet/PDF |
Quantity: | 2000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.7 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRL8259TRPBF is a thin d-pak package that features a single N-Channel logic enhancement mode power MOSFET. This device is manufactured with advanced silicon-gate CMOS technology and it is rated for applications up to 1000V. It is an ideal choice for dense and demanding applications such as power control, voltage regulating circuits, and other switching and motor applications.
The IRL8259TRPBF combines low on-resistance with fast switching times and offers superior RDS(on) in a small thin D-Pak package. This device is capable of handling higher drain-source voltage, faster switching speed and better thermal performance compared to similar parts. It has a maximum RDS(on) of 2.1Ω and its typical on-resistance is 1.9Ω.
The IRL8259TRPBF is designed for use in high-temperature applications and can operate with a temperature range of -55°C to +150°C. The on-state resistance of this device is very low, meaning less energy is dissipated as heat during operation. This results in improved conduction and better reliability over the life of the device.
The IRL8259TRPBF is easily integrated into circuits due to its thin D-Pak package. The package is composed of two thin metal layers that are connected to the gate and drain of the device. The metal layers provide a connection between the two terminals for power routing. The thin D-Pak package is also very convenient for automated assembly processes and provides superior thermal performance.
The IRL8259TRPBF is typically used in applications such as power switching and voltage regulating circuits. The device is also used to control motor speed and power levels. It is suitable for a wide range of applications due to its low on-resistance and fast switching times.
The IRL8259TRPBF is considered to be a logic enhancement mode MOSFET, which means that it operates as a switch when turned on. When the gate voltage is high, the device will be in the “on” state and the current will flow through the device. When the gate voltage is low, the device will be in the “off” state and no current will flow through the device. This capability makes the IRL8259TRPBF suitable for controlling the power supply of electrical devices such as motors.
The IRL8259TRPBF is an excellent choice for power control, voltage regulating circuits, and other switching and motor applications. This device is easy to use thanks to the thin D-Pak package and it is available in a variety of sizes and configurations. The device is designed for high temperature operation and features low on-resistance. This helps to reduce overall energy consumption, making it an ideal choice for power and voltage regulating circuits. The device is also capable of providing fast switching speeds, meaning applications such as motor speed control can be easily achieved.
The specific data is subject to PDF, and the above content is for reference
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