IS25LP080D-JNLE Allicdata Electronics
Allicdata Part #:

706-1580-ND

Manufacturer Part#:

IS25LP080D-JNLE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC FLASH 8M SPI 133MHZ 8SOP
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8) SPI - Quad I/O,...
DataSheet: IS25LP080D-JNLE datasheetIS25LP080D-JNLE Datasheet/PDF
Quantity: 11084
Stock 11084Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Memory Interface: SPI - Quad I/O, QPI, DTR
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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IS25LP080D-JNLE Memory

IS25LP080D-JNLE is an 8 megabit (1 Megabyte) SPI NOR Flash memory using Numonyx\'s B45/B45F single-die, double-cell technology. It is a non-volatile non-volatile memory device with exceptional memory density, low voltage and power options. This device is used in consumer, industrial and networking applications including SuperSpeed USB, WI-FI, MOBILE TV, WCDMA, and other consumer electronic designs.

The B45 technology provides a higher endurance than traditional NOR Flash memories, along with lower power consumption and faster write performance. It also offers a wide voltage range from 1.2V to 3.6V, and is suitable for consumer and industrial applications. Furthermore, the superior balance of reliability, performance and scalability allow for a wide variety of applications ranging from consumer/industrial to networking.

The IS25LP080D-JNLE is a 2-wire interface (SPI) flash device with 4K-page erasing and 4Kb writing capabilities. The device supports COMS memory write and read operations, byte- and page-level operations, erase-suspend and erase-resume. The device is capable of running at clock speeds up to 50MHz and is able to raise the frequency of operations to meet system performance demands and to reduce overall system latency.

The device is built using NAND architecture, using an erase block of 0.5Mbits. The device features Advanced Hardware Protection against unintended write and erase operations. The device also features Error Correction Technology, which offers advanced protection against spontaneous and unexpected changes in data due to interference.

The device is also equipped with Advanced Data Security features, which ensures secure access and data storage. This feature safeguards against external tampering, intentional or accidental corruption, or malicious internal activity. The device also supports up to 32Kb of OTP, which offers additional protection from external access.

The IS25LP080D-JNLE uses Serial Peripheral Interface (SPI) mode and can be interfaced with other SPI buses. The device is capable of supporting both 1.8V and 3.3V interfaces. The device can also be connected to a microcontroller, allowing it to function as a complete system solution.

In terms of working principle, the IS25LP080D-JNLE works by storing data in a memory cell. The memory cell is a cascade of serial static logic (SRL) circuits. Data is written to memory cells based on the clock signals provided by the system controller. The data is read from the memory cells according to the system controller\'s read commands. The device can support fast write and read operations, as well as erase and programming operations.

IS25LP080D-JNLE is a high-density memory that offers good performance and reliable storage. The device is ideal for a wide range of applications, such as consumer electronics, communication, industrial, and networking. Its low power and wide voltage range make it suitable for these applications.

The specific data is subject to PDF, and the above content is for reference

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