IS42RM16160E-75BLI Allicdata Electronics
Allicdata Part #:

IS42RM16160E-75BLI-ND

Manufacturer Part#:

IS42RM16160E-75BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 256M PARALLEL 54TFBGA
More Detail: SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel...
DataSheet: IS42RM16160E-75BLI datasheetIS42RM16160E-75BLI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (16M x 16)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 6ns
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 3 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Description

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Category: Memory

IS42RM16160E-75BLI is a type of SDRAM (Synchronous Dynamic Random Access Memory). The “IS” stands for Integrated Solution, which means that the integrated circuit package that contains the memory is optimized for special applications. IS42RM16160E-75BLI is a 16Mbit Dynamic Random Access Memory (DRAM), which is suitable for high-performance and high-reliability applications. It is available in a 56-pin 900 mil plastic TSOP package.

IS42RM16160E-75BLI is widely used in industrial applications, automation control systems and data acquisition systems. It is also used in networking and communication systems, routers, and switches. The IS42RM16160E-75BLI also has a wide variety of applications, such as medical equipment, automotive safety systems, avionics, surveillance systems and embedded systems.

IS42RM16160E-75BLI DRAM is a synchronous DRAM, meaning that its operation is synchronized with the system clock. The DRAM is operated at a frequency of 75 MHz, allowing it to achieve high transfer rates. It is designed to be used in high-speed and high-reliability applications. The DRAM has a 2-cycle latency, meaning that there is a 2-cycle delay between the activation of a data read or write and the completion of the operation.

The IS42RM16160E-75BLI also has an on-board refresh controller. The refresh controller refreshes the data in the memory cells every 15.625μs. This means that the memory cells are constantly being refreshed, and data is not lost or corrupted due to long periods of inactivity. This feature makes the IS42RM16160E-75BLI an ideal choice for applications where data needs to be retained for long periods of time.

The IS42RM16160E-75BLI is also equipped with Error-Correcting Code (ECC) capability. The ECC function ensures that any errors in the data stored in the DRAM cells are detected and corrected. This is especially important in industrial, automotive, and avionic applications where data integrity is of utmost importance.

In order for any DRAM to operate correctly, it must be correctly programmed. The IS42RM16160E-75BLI includes an embedded self-refresher controller that allows the DRAM to operate correctly even under difficult operating conditions. The self-refresher controller also allows the DRAM to maintain its data integrity even when there is a power outage.

The IS42RM16160E-75BLI is an excellent choice for embedded applications due to its high-performance and reliability. The integrated solution package, ECC capability, and self-refresher make the IS42RM16160E-75BLI an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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