IS42S16400D-6TLI-TR Allicdata Electronics
Allicdata Part #:

IS42S16400D-6TLI-TR-ND

Manufacturer Part#:

IS42S16400D-6TLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 64M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5ns...
DataSheet: IS42S16400D-6TLI-TR datasheetIS42S16400D-6TLI-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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IS42S16400D-6TLI-TR is a type of memory device made up of square circuits, mainly used for storing data in electronic products. It is extremely popular and widely used in the semiconductor industry due to its exceptional performance. Through targeted research, efforts have been made to further improve the performance, making this memory device the ideal choice for many applications including high-end electronics, communications, multimedia and video gaming.

IS42S16400D-6TLI-TR is a dynamic random access memory device that consists of 16Mb cells arranged in a 32Mbit structure. It is a dual port memory, allowing simultaneous access to data by both reading and writing. As part of its high performance, these memory devices have high speed and low power technology. The speed of access to stored data is high, and due to their low power technology, the power consumption is minimized, making this memory device ideal for use in power sensitize applications.

The IS42S16400D-6TLI-TR memory device uses a novel methodology for data storage and access. It utilizes a structure that is implemented with three-time interleaving and dual-port architecture. This configuration helps reduce the performance impact on data access when multiple processors are simultaneously accessing data from the device. Moreover, the device also implements a row buffer, this memory component helps to speed up the access time of the stored data.

In addition to its advanced circuitry, this memory device also has a high endurance and capacity for data. It uses a 0.18um embedded DRAM process technology that offers a superior endurance rating. This makes it suitable for demanding applications that require high endurance and capacity. Furthermore, the memory device also has low speed access capabilities which allow it to access data stored in smaller than 100ns timings. This low speed feature also makes this memory device the ideal choice for memory intensive applications.

Overall, IS42S16400D-6TLI-TR is a powerful and reliable memory device that is suitable for many types of applications. Its efficient circuitry, low power consumption, high speed, and endurance make it ideal for use in many electronic systems. It is also an excellent choice for memory intensive applications, due to its low speed access capabilities. The device is also economical, thus offering an economical alternative to more expensive memory devices. As such, IS42S16400D-6TLI-TR should be considered when choosing a memory device for any application.

The specific data is subject to PDF, and the above content is for reference

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