IS43R16320F-5BLI Allicdata Electronics
Allicdata Part #:

IS43R16320F-5BLI-ND

Manufacturer Part#:

IS43R16320F-5BLI

Price: $ 5.47
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 200MHZ
More Detail: SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 20...
DataSheet: IS43R16320F-5BLI datasheetIS43R16320F-5BLI Datasheet/PDF
Quantity: 1000
190 +: $ 4.96971
Stock 1000Can Ship Immediately
$ 5.47
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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IS43R16320F-5BLI is a DRAM memory integrated circuit used in high-performance applications. It is a low-power, high-speed, low-latency memory device. The device packs up to 8.8GB of data in its 256Mbit capacity. It provides reliable data storage for both short and long-term applications.

The IS43R16320F-5BLI is designed to take advantage of both synchronous and asynchronous technologies. It supports up to eight banks of internal memory, allowing for higher memory density, faster processing speeds and better multitasking. The device is also designed to the specifications of the Refreshable Dynamic Random Access Memory (DRAM) standards. It is capable of transferring data at up to 1333 Megabits per second (Mbps) and can be refreshed in a very short time period.

In terms of applications, the IS43R16320F-5BLI can be used in applications such as servers, routers, gateways and embedded systems. Its low latency and high speed mean that it can deliver quicker response times and better overall performance. Its high-density capacity also makes it ideal for applications that require large amounts of data storage, such as big data analytics or artificial intelligence applications.

In terms of working principle, the IS43R16320F-5BLI is a type of Dynamic Random Access Memory (DRAM). This type of memory stores data as electrical charges on capacitors. It is composed of an array of cells, each of which has a single transistor and one or more capacitors. The capacitors store the data, while the transistors control the reading and writing of the data.

When a user writes a data value to the IS43R16320F-5BLI, the charge on the capacitors is moved to indicate the value that has been written. As the capacitor gradually discharges, the data is gradually erased. To ensure consistent values are stored, the capacitor can be recharged at regular intervals. This process is known as refreshing the memory.

When a user wants to read a value from the memory, the transistor allows the user to access the capacitor. The transistor then reads the value stored on the capacitor and transfers it to the user.

The IS43R16320F-5BLI is a type of high-performance DRAM that can provide reliable and fast data storage for many applications. It supports up to 8 banks of internal memory, allowing for higher density and faster processing speeds and better multitasking. Furthermore, it can transfer data at up to 1333 Mbps and can be refreshed in a very short time period, making it suitable for applications that require low latency and large amounts of data storage.

The specific data is subject to PDF, and the above content is for reference

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